Efficient NIR Perovskite Light-Emitting Diodes Enabled by Incorporating an Anthracene Derivative as a Bifunctional Electron Transport Layer Efficient NIR Perovskite Light-Emitting Diodes Enabled by Incorporating an Anthracene Derivative as a Bifunctional Electron Transport Layer AITranslate

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DOI：https://doi.org/10.1021/acsaelm.1c01312

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Exploring multifunctional charge transport materials with well-matched energy-levels alignment and compatible interfaces is deemed a potential approach toward high-performance perovskite light-emitting diodes (PeLEDs). Herein, an anthracene derivative, 1-[4-(10-[1,1′-biphenyl]-4-yl-9-anthracenyl)phenyl]-2-ethyl-1H-benzimidazole (BAEBi), is demonstrated as an efficient electron tranport layer (ETL) as well as an effective surface passivation agent for near-infrared (NIR) quasi two-dimensional (Q-2D) PeLEDs. Owing to the promising electron injection and transport capability of BAEBi, an improved charge-carrier balance is attained in rather hole-dominant PeLEDs. Meanwhile, BAEBi assisted to significantly mitigate the perovskite/ETL interfacial defects, rendering a pinhole-free smooth film with quite low roughness and ameliorated exciton lifetime. Consequently, BAEBi-containing NIR Q-2D PeLEDs manifested a low turn-on voltage of 2.5 V with a decent external quantum efficiency (EQE) of 9.2% and a peak radiance of 127 W sr–1 m–2; these values are, respectively, ∼1.5- and 15-fold higher compared to that of a commonly used ETL, 2,2′,2″-(1,3,5-benzinetriyl)-tris(1-phenyl-1-H-benzimidazole) (TPBi). Importantly, the BAEBi-incorporating champion PeLED exhibited significantly curtailed efficiency roll-off and prolonged operational stability. These findings reveal an ingenious solution to address the charge imbalance issue and suppress the interfacial defects in PeLEDs that would spur further development of this emerging technology toward efficient solid-state lighting and high-resolution displays.