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Structural Characterization of ITO Conductive and Transparent Film Prepared By Sol-gel Technique AITranslate

Lantern University Material Gakuin;Lantern University Material Gakuin;Lantern University Material Gakuin
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Publisher: Editorial Office of Rare Metals and Cemented Carbides
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Abstract AITranslate

Indium tin oxide (ITO) conductive and transparent film is prepared on quartz glass matrix from In(NO_3) and acetylacetone by sol-gel dip-coating technique with anhydrous SnCl_4 as the dopant.The phase transformation process,the surface structure,the microscopic morphology and physical properties of the film were measured and analyzed by XRD,SED,IR,4-probe method and UV-VIS spectrometer.The experimental results showed that it is absolutely feasible to fabricate ITO film on the quartz matrix by sol-gel technique,and the ITO film has the micro-structure accumulated by several particles and ITO film has the cubic bixbyite crystal structure,and[111] is its preferred orientation.The thickness of ITO film was below 150nm upon five times dip-coating ,the square-wave resistance of the film is about 110 Ω with resistivity about 1.65×10-2 Ω·cm and>90% transmittancy.

KeyWords AITranslate

ITO film sol-gel structure characterization

1王建恩,王运涛,王军,张兵临,何金田,张艳兰.三氧化二铟基透明导电薄膜光、电特性的研究[J].功能材料,1995,26(2):141-146. 被引量:21

2李玉增.ITO薄膜产业化进程概述[J].世界有色金属,1998(11):11-15. 被引量:7

3Shigesato,et al.Electrical and structural properties of low resistivity tin-doped indium oxide films[J].Journal of Applied physics,1992,71(7):356.

4张曙,罗新,王乔民.应用铟源的反应蒸发制备In_2O_3透明导电膜[J].无机材料学报,1996,11(3):510-514. 被引量:4

5罗文秀,谭忠恪.In2O3:Sn膜的MO—CVD技术研究[J].电源技术,1991(1):25-27. 被引量:1

6Daoudi K,et al.Tin-doped indium oxide thin film deposited by sol-gel dip-coating technique[J].Materials Science and Engineering,2002,21:313.

7Djaoued Y,et al.Sol-gel-prepared ITO film for electrochromic system[J].Thin Soild Film,1997, 293:108.

1朴圣洁,刘家祥,曾胜男.分散剂PEG对ITO前驱物浆料稳定性能的影响[J].稀有金属材料与工程,2007,36(8):1465-1468. 被引量:6

2高美珍,辛科,张锋,孙惠娜.热处理时间对溶胶-凝胶法制备ITO薄膜结构、形貌和性质的影响[J].材料导报,2009,23(2):87-90. 被引量:2

3李晶,赵晓东,李芝华,任冬燕.喷雾干燥-冷等静压-烧结法制备ITO靶材的工艺研究[J].稀有金属与硬质合金,2011,39(2):38-41. 被引量:9

1张楠,刘家祥,吴妲.分散剂对ITO前驱物浆料稳定性的影响[J].稀有金属材料与工程,2009,38(6):1033-1037. 被引量:4

2赵轶,孔祥荣,曾晓飞,蒲源,付纪文,陶霞,陈建峰.纳米氧化铟锡粉体的制备及其复合膜的红外性能研究[J].北京化工大学学报:自然科学版,2009,36(B11):4-7. 被引量:1

3许启明,张磊,姚燕燕,李宁,冯俊伟.聚乙烯吡咯烷酮及钛酸酯对ITO浆料的分散稳定性考察[J].精细化工,2011,28(1):29-33. 被引量:3

4黄旭珊,吕维忠,罗仲宽,宋力昕.化学共沉淀法制备纳米铋掺杂氧化锡[J].精细化工,2011,28(9):843-847. 被引量:3

5刘喜波,陈派明,杨硕,王政红,张秀勤.退火处理对铟锡氧化物粉末的影响[J].材料导报,2011,25(18):30-34.

6姜鹤,王东新,王燕昌,孙本双,钟景明.ITO靶材的毒化机理研究现状[J].湖南有色金属,2012,28(1):46-50. 被引量:2

7陈中文,杨付,陈晶,周志鹏,高宪娥.YAG纳米粉体的制备及去团聚[J].中国激光,2012,39(B06):222-226. 被引量:1

8刘环,魏钦帅,刘大春,杨斌,戴永年.真空蒸馏铟锡合金回收金属铟的研究[J].真空科学与技术学报,2012,32(10):902-906. 被引量:10

9石嘉宇,谭艳,苏泽飞,潘亚美,林俊君,吕维忠,万军鹏.纳米ITO水性浆料分散性能的影响因素研究[J].广州化工,2013,41(1):53-55. 被引量:1

10高玉伟,张丽丽,周炳卿,张林睿,张龙龙.氧化铟锡薄膜材料制备及其光电特性研究[J].内蒙古师范大学学报:自然科学汉文版,2014,43(3):290-294. 被引量:1

1曾胜男,刘家祥,张楠.ITO薄膜的微观组织结构与光电性能研究[J].稀有金属材料与工程,2007,36(10):1861-1864. 被引量:3

2辛荣生,林钰.薄膜厚度对ITO膜结构与性能的影响[J].真空,2007,44(5):22-24. 被引量:3

3江自然.ITO透明导电薄膜的制备方法及研究进展[J].材料开发与应用,2010,25(4):68-71. 被引量:25

4陈雪松,卢秋虹,王海花,孙振华.Au修饰SnO_2复合纳米材料的制备和气敏性能[J].材料研究学报,2012,26(4):349-354. 被引量:1

5李芝华,任冬燕.溶胶-凝胶法制备ITO透明导电薄膜的研究进展[J].材料导报,2005,19(5):4-6. 被引量:4

6朱建勇,左坤玉.机械合金化制备W—Ni—Cu纳米复合粉末的研究[J].湖南冶金,2004,32(1):26-28. 被引量:2

7常溪,杨立宁,齐海波.多次纺丝与退火对ITO薄膜表面均匀性的影响[J].石家庄铁道大学学报:自然科学版,2014,27(2):100-104.

8成立顺,孙本双,钟景明,何力军,王东新,陈焕铭.ITO透明导电薄膜的研究进展[J].稀有金属快报,2008,27(3):10-16. 被引量:26

9张元广,陈友存,陈乾旺.精细结构SnO_2纳米球的制备与表征[J].无机材料学报,2003,18(1):243-245. 被引量:9

10望咏林,颜悦,沈玫,贺会权,纪建超,张官理.离子束辅助磁控溅射低温沉积ITO透明导电薄膜的研究[J].真空,2006,43(4):7-9. 被引量:3

Basic Information:

DOI:

Chinese Library Classification Number:TB383[一般工业技术—材料科学与工程]

Citation Information:

Indium tin oxide (ITO) conductive and transparent film is prepared on quartz glass matrix from In(NO_3) and acetylacetone by sol-gel dip-coating technique with anhydrous SnCl_4 as the dopant.The phase transformation process,the surface structure,the microscopic morphology and physical properties of the film were measured and analyzed by XRD,SED,IR,4-probe method and UV-VIS spectrometer.The experimental results showed that it is absolutely feasible to fabricate ITO film on the quartz matrix by sol-gel technique,and the ITO film has the micro-structure accumulated by several particles and ITO film has the cubic bixbyite crystal structure,and[111] is its preferred orientation.The thickness of ITO film was below 150nm upon five times dip-coating ,the square-wave resistance of the film is about 110 Ω with resistivity about 1.65×10-2 Ω·cm and>90% transmittancy.

quote

GB/T 7714-2015 [1] LI Zhi-hua, LI Jing, REN Dong-yan. Structural Characterization of ITO Conductive and Transparent Film Prepared By Sol-gel Technique[J]. Rare Metals and Cemented Carbides, 2004(4): 21-24.
MLA [1] LI Zhi-hua, et al., "Structural Characterization of ITO Conductive and Transparent Film Prepared By Sol-gel Technique." Rare Metals and Cemented Carbides, no. 4, 2004, pp. 21-24.
APA [1] LI Zhi-hua, LI Jing, & REN Dong-yan. (2004). Structural Characterization of ITO Conductive and Transparent Film Prepared By Sol-gel Technique. Rare Metals and Cemented Carbides(4), 21-24.
IEEE [1] LI Zhi-hua, LI Jing, and REN Dong-yan, "Structural Characterization of ITO Conductive and Transparent Film Prepared By Sol-gel Technique," Rare Metals and Cemented Carbides, no. 4, pp. 21-24, 2004. keywords: {ITO film;sol-gel;structure characterization}