Hydrogen storage in Al and Ti dispersed on graphene with boron substitution: First-principles calculations AITranslate
Abstract AITranslate
The characteristics of hydrogen adsorption on Al and Ti metal atoms dispersed on graphene with boron substitution is investigated including metal adatom clustering and electronic structure of H2/metal-adsorbed graphene using density functional theory calculations. It is found that Al and Ti atoms are well dispersed on boron-substituted graphene and can form a (2 × 2) pattern because clustering of metal atoms is hindered by the repulsive Coulomb interaction between metal adatoms and strong bonding force between dispersed metal atom and boron-substituted graphene. In addition, Al and Ti can bind up to eight H2 molecules on the double side of the boron-substituted graphene. This allows for a storage capacity of a 9.9 wt.% and 7.9 wt.% hydrogen for Al and Ti adatom, respectively.
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DOI:https://doi.org/10.1016/j.commatsci.2010.02.016
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The characteristics of hydrogen adsorption on Al and Ti metal atoms dispersed on graphene with boron substitution is investigated including metal adatom clustering and electronic structure of H2/metal-adsorbed graphene using density functional theory calculations. It is found that Al and Ti atoms are well dispersed on boron-substituted graphene and can form a (2 × 2) pattern because clustering of metal atoms is hindered by the repulsive Coulomb interaction between metal adatoms and strong bonding force between dispersed metal atom and boron-substituted graphene. In addition, Al and Ti can bind up to eight H2 molecules on the double side of the boron-substituted graphene. This allows for a storage capacity of a 9.9 wt.% and 7.9 wt.% hydrogen for Al and Ti adatom, respectively.
quote
| GB/T 7714-2015 | [1] HongLae Park, YongChae Chung. Computational Materials Science, 2010(49). DOI:10.1016/j.commatsci.2010.02.016. |
| MLA | [1] HongLae Park, and YongChae Chung. Computational Materials Science, no. 49, 2010, https://doi.org/10.1016/j.commatsci.2010.02.016. |
| APA | [1] HongLae Park, & YongChae Chung. (2010). Computational Materials Science(49). https://doi.org/10.1016/j.commatsci.2010.02.016 |
| IEEE | [1] HongLae Park and YongChae Chung, Computational Materials Science, no. 49, 2010, doi: 10.1016/j.commatsci.2010.02.016. |
