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Hydrogen storage in Al and Ti dispersed on graphene with boron substitution: First-principles calculations AITranslate

Hanyang University; Hanyang University
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Publisher: Elsevier
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Abstract AITranslate

The characteristics of hydrogen adsorption on Al and Ti metal atoms dispersed on graphene with boron substitution is investigated including metal adatom clustering and electronic structure of H2/metal-adsorbed graphene using density functional theory calculations. It is found that Al and Ti atoms are well dispersed on boron-substituted graphene and can form a (2 × 2) pattern because clustering of metal atoms is hindered by the repulsive Coulomb interaction between metal adatoms and strong bonding force between dispersed metal atom and boron-substituted graphene. In addition, Al and Ti can bind up to eight H2 molecules on the double side of the boron-substituted graphene. This allows for a storage capacity of a 9.9 wt.% and 7.9 wt.% hydrogen for Al and Ti adatom, respectively.

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DOI:https://doi.org/10.1016/j.commatsci.2010.02.016

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Citation Information:

The characteristics of hydrogen adsorption on Al and Ti metal atoms dispersed on graphene with boron substitution is investigated including metal adatom clustering and electronic structure of H2/metal-adsorbed graphene using density functional theory calculations. It is found that Al and Ti atoms are well dispersed on boron-substituted graphene and can form a (2 × 2) pattern because clustering of metal atoms is hindered by the repulsive Coulomb interaction between metal adatoms and strong bonding force between dispersed metal atom and boron-substituted graphene. In addition, Al and Ti can bind up to eight H2 molecules on the double side of the boron-substituted graphene. This allows for a storage capacity of a 9.9 wt.% and 7.9 wt.% hydrogen for Al and Ti adatom, respectively.

quote

GB/T 7714-2015 [1] HongLae Park, YongChae Chung. Computational Materials Science, 2010(49). DOI:10.1016/j.commatsci.2010.02.016.
MLA [1] HongLae Park, and YongChae Chung. Computational Materials Science, no. 49, 2010, https://doi.org/10.1016/j.commatsci.2010.02.016.
APA [1] HongLae Park, & YongChae Chung. (2010). Computational Materials Science(49). https://doi.org/10.1016/j.commatsci.2010.02.016
IEEE [1] HongLae Park and YongChae Chung, Computational Materials Science, no. 49, 2010, doi: 10.1016/j.commatsci.2010.02.016.