Study on Technology for Preparation of ITO Target by CIP and Sintering Process AITranslate
Abstract AITranslate
The paper describes the technology for the preparation of ITO sputter target by CIP and sintering process.ITO complex powder is produced by chemical precipitation followed by CIP under 200 MPa,at 60% of relative density of the compact,then 6-h sintering at 1 600 ℃ to produce ITO target at relative density >90%.In addition,the influence of powder size,sintering temperature and sintering period on the density of target are investigated.And the discussion is made on the sintering atmosphere and process.
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DOI：
Chinese Library Classification Number:TN304.21[电子电信—物理电子学]
Citation Information:
The paper describes the technology for the preparation of ITO sputter target by CIP and sintering process.ITO complex powder is produced by chemical precipitation followed by CIP under 200 MPa,at 60% of relative density of the compact,then 6-h sintering at 1 600 ℃ to produce ITO target at relative density >90%.In addition,the influence of powder size,sintering temperature and sintering period on the density of target are investigated.And the discussion is made on the sintering atmosphere and process.
quote
| GB/T 7714-2015 | [1] LI Jing, CHEN Shi-zhu, LI Zhi-hua. Study on Technology for Preparation of ITO Target by CIP and Sintering Process[J]. Rare Metals and Cemented Carbides, 2003(4): 18-21. |
| MLA | [1] LI Jing, et al., "Study on Technology for Preparation of ITO Target by CIP and Sintering Process." Rare Metals and Cemented Carbides, no. 4, 2003, pp. 18-21. |
| APA | [1] LI Jing, CHEN Shi-zhu, & LI Zhi-hua. (2003). Study on Technology for Preparation of ITO Target by CIP and Sintering Process. Rare Metals and Cemented Carbides(4), 18-21. |
| IEEE | [1] LI Jing, CHEN Shi-zhu, and LI Zhi-hua, "Study on Technology for Preparation of ITO Target by CIP and Sintering Process," Rare Metals and Cemented Carbides, no. 4, pp. 18-21, 2003. keywords: {CIP;sintering;target;relative density} |