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High Driving Current Selector Based on As-Implanted HfO2 Thin Film for 3D Phase Change Memory High Driving Current Selector Based on As-Implanted HfO2 Thin Film for 3D Phase Change Memory AITranslate

Ruobing Wang; Tianqi Guo; Dongning Yao; Sannian Song; Zhitang Song
University of Chinese Academy of Sciences; Shanghai Institute of Micro-System and Information Technology; Shanghai Institute of Micro-System and Information Technology; Shanghai Institute of Micro-System and Information Technology; Shanghai Institute of Micro-System and Information Technology
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Publisher: ACS
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Abstract AITranslate

A large crossbar array is desirable for high-density 3D stacking phase change memory (PCM) applications, in which the leakage current is mainly decided by selector devices. Meanwhile, a large driving current is also needed to meet the Reset operation of the PCM cell. Here, we propose a selector based on a nanoscale HfO2 film via As ion implantation, which has a low threshold voltage of 1.9 V, a milliamp-scale high driving current, a large selectivity of 106, fast turn on speed, and good endurance (108 switching cycles). These excellent performances make it applicable in the high-density stacked PCM application.

KeyWords AITranslate

selector device hafnium oxide As ion implantation high driving current 3D stacking memory
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Basic Information:

DOI：https://doi.org/10.1021/acsaelm.1c00980

Chinese Library Classification Number:

Citation Information:

A large crossbar array is desirable for high-density 3D stacking phase change memory (PCM) applications, in which the leakage current is mainly decided by selector devices. Meanwhile, a large driving current is also needed to meet the Reset operation of the PCM cell. Here, we propose a selector based on a nanoscale HfO2 film via As ion implantation, which has a low threshold voltage of 1.9 V, a milliamp-scale high driving current, a large selectivity of 106, fast turn on speed, and good endurance (108 switching cycles). These excellent performances make it applicable in the high-density stacked PCM application.

quote

GB/T 7714-2015 [1] Ruobing Wang, Tianqi Guo, Dongning Yao, et al. ACS Applied Electronic Materials, 2022(4). DOI:10.1021/acsaelm.1c00980.
MLA [1] Ruobing Wang, et al., ACS Applied Electronic Materials, no. 4, 2022, https://doi.org/10.1021/acsaelm.1c00980.
APA [1] Ruobing Wang, Tianqi Guo, Dongning Yao, Sannian Song, & Zhitang Song. (2022). ACS Applied Electronic Materials(4). https://doi.org/10.1021/acsaelm.1c00980
IEEE [1] Ruobing Wang, Tianqi Guo, Dongning Yao, Sannian Song, and Zhitang Song, ACS Applied Electronic Materials, no. 4, 2022, doi: 10.1021/acsaelm.1c00980. keywords: {selector device hafnium oxide As ion implantation high driving current 3D stacking memory}