Cryogenic Temperature Deposition of High-Performance CoFeB/MgO/CoFeB Magnetic Tunnel Junctions on ϕ300 mm Wafers Cryogenic Temperature Deposition of High-Performance CoFeB/MgO/CoFeB Magnetic Tunnel Junctions on ϕ300 mm Wafers AITranslate

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DOI：https://doi.org/10.1021/acsaelm.3c00068

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We developed a cryogenic temperature deposition process for high-performance CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) on ϕ300 mm thermally oxidized silicon wafers. The effect of the deposition temperature of the CoFeB layers on the nanostructure, magnetic, and magneto-transport properties of the MTJs was investigated in detail. When CoFeB was deposited at 100 K, the MTJs exhibited a perpendicular magnetic anisotropy (PMA) of 214 μJ/m2 and a voltage-controlled magnetic anisotropy (VCMA) coefficient of −45 fJ/V m, corresponding to 1.4- and 1.7-fold enhancements in PMA and VCMA, respectively, compared to the case of room-temperature deposition of CoFeB. The improvement in the MTJ properties was not simply due to the morphology of the MTJ films. The interface-sensitive magneto-transport properties indicated that interfacial qualities such as intermixing and oxidation states at the MgO/CoFeB interfaces were improved by the cryogenic temperature deposition. A cryogenic temperature sputtering deposition is expected to be a standard manufacturing process for next-generation magnetoresistive random-access memory.