daohang fenxiangbox searchbox qikanlogonew daohangnew searchboxnew navrightzone footerzone paper
English
Chinese 简体中文 English English
Home > Journals > Computational Materials Science
‹ Previous Article Next Article ›

On the dynamic behaviors of silicon single crystal under nanosecond laser irradiation AITranslate

Q.Y. Liu; J. Zhou; Y.W. Zhao; L.C. Xiong; T.L. Shi; Y.H. Long
Guilin University of Electronic Technology; Guilin University of Electronic Technology; Guilin University of Electronic Technology; Huazhong University of Science and Technology; Huazhong University of Science and Technology; Guilin University of Electronic Technology
AITranslate
Publisher: Elsevier
Share Citation Information Add to Favorites

    Scan to share on WeChat or Moments

Use WeChat scan.
Share with WeChat friends or Moments

Abstract AITranslate

Highlights • The thermal-mechanical interaction during nanosecond laser ablation was studied. • Laser induced shock effect is not only studied by MDS, but also theoretically studied, and good agreement can be found. • It directly investigated the mechanism of dynamic response of silicon single crystal during laser ablation. • The physical foundations of laser induced damages are investigated. The dynamic behaviors of silicon single crystal under nanosecond laser irradiation are investigated. To comprehensively study the dynamic behaviors of silicon single crystal under laser irradiation, the effects of laser intensity, temperature, and crystal orientation are directly studied using molecular dynamics simulations. The relevant physical backgrounds are learned under the help of Rankine-Hugoniot theory. It shows the amplitude of laser induced shock wave will increase with the increase of laser intensity. The shock velocity can be greatly affected by lattice orientation, temperature and the amplitude of shock wave. With the increase of shock pressure and temperature, laser induced damages, including virtual melting, pre-melting, shear belt become severe. And laser induced damages inversely result in shock attenuation. It also can be found that damages grow along the 〈1 1 1〉 crystal planes, due to the concentration of dislocation belt along these planes. Our work sheds insight into the dynamic behaviors of silicon single crystal under the irradiation of nanosecond laser. Graphical abstract For nanosecond laser irradiation, after melting happens the redistribution of nanosecond laser energy lead to shock effect into the high temperature base materials. The influence factors, including base material temperature, laser intensity, and crystal orientation, on the dynamic response of silicon single crystal are investigated. Download : Download high-res image (201KB) Download : Download full-size image

KeyWords AITranslate

No data

Basic Information:

DOI：https://doi.org/10.1016/j.commatsci.2019.01.008

Chinese Library Classification Number:

Citation Information:

Highlights • The thermal-mechanical interaction during nanosecond laser ablation was studied. • Laser induced shock effect is not only studied by MDS, but also theoretically studied, and good agreement can be found. • It directly investigated the mechanism of dynamic response of silicon single crystal during laser ablation. • The physical foundations of laser induced damages are investigated. The dynamic behaviors of silicon single crystal under nanosecond laser irradiation are investigated. To comprehensively study the dynamic behaviors of silicon single crystal under laser irradiation, the effects of laser intensity, temperature, and crystal orientation are directly studied using molecular dynamics simulations. The relevant physical backgrounds are learned under the help of Rankine-Hugoniot theory. It shows the amplitude of laser induced shock wave will increase with the increase of laser intensity. The shock velocity can be greatly affected by lattice orientation, temperature and the amplitude of shock wave. With the increase of shock pressure and temperature, laser induced damages, including virtual melting, pre-melting, shear belt become severe. And laser induced damages inversely result in shock attenuation. It also can be found that damages grow along the 〈1 1 1〉 crystal planes, due to the concentration of dislocation belt along these planes. Our work sheds insight into the dynamic behaviors of silicon single crystal under the irradiation of nanosecond laser. Graphical abstract For nanosecond laser irradiation, after melting happens the redistribution of nanosecond laser energy lead to shock effect into the high temperature base materials. The influence factors, including base material temperature, laser intensity, and crystal orientation, on the dynamic response of silicon single crystal are investigated. Download : Download high-res image (201KB) Download : Download full-size image

quote

GB/T 7714-2015 [1] Q.Y. Liu, J. Zhou, Y.W. Zhao, et al. Computational Materials Science, 2019(160). DOI:10.1016/j.commatsci.2019.01.008.
MLA [1] Q.Y. Liu, et al., Computational Materials Science, no. 160, 2019, https://doi.org/10.1016/j.commatsci.2019.01.008.
APA [1] Q.Y. Liu, J. Zhou, Y.W. Zhao, L.C. Xiong, T.L. Shi, & Y.H. Long. (2019). Computational Materials Science(160). https://doi.org/10.1016/j.commatsci.2019.01.008
IEEE [1] Q.Y. Liu, J. Zhou, Y.W. Zhao, L.C. Xiong, T.L. Shi, and Y.H. Long, Computational Materials Science, no. 160, 2019, doi: 10.1016/j.commatsci.2019.01.008.