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Charge-Transfer Complex-Based Artificial Layers for Stable and Efficient Zn Metal Anodes AITranslate

Sungkyunkwan University; Fujian Normal University; Fuzhou University; Yonsei University; Sungkyunkwan University; Nanjing University of Science and Technology; Fujian Normal University; Fuzhou University; Sungkyunkwan University; Yonsei University; Sungkyunkwan University
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Publisher: ACS
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Abstract AITranslate

Herein, we report a charge-transfer complex electrolyte additive, 7,7,8,8-tetracyanoquinodimethane (TCNQ), with high Zn affinity, which was tightly adsorbed on the surface of a Zn anode to form a dense and robust interfacial complex layer and suppress the activity of H2O. As verified by comprehensive experimental and computational analyses, this complex layer could construct a Zn–Zn(TCNQ)2 Ohmic contact interface, guide rapid ion/electron transport, ameliorate electric field distribution, and inhibit the direct contact between the active H2O and Zn anode, demonstrating a dendrite-free Zn anode and facile Zn plating/stripping kinetics. Consequently, the Zn||Zn symmetrical cell exhibits a high Zn plating/stripping reversibility of over 1000 h at 20 mA cm–2 and 5 mA h cm–2 and a high depth of discharge (43%). Moreover, the Zn||MnO2 full cell delivers a high capacity of 143.3 mA h g–1 at 2000 mA g–1 even after 4000 cycles and a capacity retention of 94.7% after returning to 100 mA g–1.

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DOI:https://doi.org/10.1021/acsenergylett.3c00534

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Citation Information:

Herein, we report a charge-transfer complex electrolyte additive, 7,7,8,8-tetracyanoquinodimethane (TCNQ), with high Zn affinity, which was tightly adsorbed on the surface of a Zn anode to form a dense and robust interfacial complex layer and suppress the activity of H2O. As verified by comprehensive experimental and computational analyses, this complex layer could construct a Zn–Zn(TCNQ)2 Ohmic contact interface, guide rapid ion/electron transport, ameliorate electric field distribution, and inhibit the direct contact between the active H2O and Zn anode, demonstrating a dendrite-free Zn anode and facile Zn plating/stripping kinetics. Consequently, the Zn||Zn symmetrical cell exhibits a high Zn plating/stripping reversibility of over 1000 h at 20 mA cm–2 and 5 mA h cm–2 and a high depth of discharge (43%). Moreover, the Zn||MnO2 full cell delivers a high capacity of 143.3 mA h g–1 at 2000 mA g–1 even after 4000 cycles and a capacity retention of 94.7% after returning to 100 mA g–1.

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GB/T 7714-2015 [1] Peixun Xiong, Chuyuan Lin, Ying Wei, et al. ACS Energy Letters, 2023(8). DOI:10.1021/acsenergylett.3c00534.
MLA [1] Peixun Xiong, et al., ACS Energy Letters, no. 8, 2023, https://doi.org/10.1021/acsenergylett.3c00534.
APA [1] Peixun Xiong, Chuyuan Lin, Ying Wei, JungHui Kim, Gun Jang, Keren Dai, Lingxing Zeng, Shuping Huang, Seok Joon Kwon, SangYoung Lee, & Ho Seok Park. (2023). ACS Energy Letters(8). https://doi.org/10.1021/acsenergylett.3c00534
IEEE [1] Peixun Xiong, Chuyuan Lin, Ying Wei, JungHui Kim, Gun Jang, Keren Dai, Lingxing Zeng, Shuping Huang, Seok Joon Kwon, SangYoung Lee, and Ho Seok Park, ACS Energy Letters, no. 8, 2023, doi: 10.1021/acsenergylett.3c00534.