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Nonlinear Band Gap Tunability in Selenium–Tellurium Alloys and Its Utilization in Solar Cells AITranslate

Northwestern University; Northwestern University; Nanyang Technological University; Northwestern University; Northwestern University
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Publisher: ACS
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Abstract AITranslate

In this Letter, we report the alloying of the high-band-gap photovoltaic elemental absorber selenium with the isomorphic low-band-gap semiconductor tellurium to tune the band gap energy of Se1–xTex to the optimal value for photovoltaic absorber. Photovoltaic devices based on crystalline Se1–xTex alloys are promising candidates for extremely cheap and highly scalable solar cells, offering simple low-temperature fabrication and intrinsic stability. We explore the electro-optical properties of Se1–xTex alloys and show that the tellurium red shifts the band gap in a nonlinear manner, faster than expected, due to significantly nonlinear change of the conduction band energy, allowing them to easily reach the desired band gap of 1.2–1.4 eV. On the basis of these results, we rationally design and demonstrate the fabrication of simple Se1–xTex photovoltaic devices, showing significantly improved current density in comparison to pure selenium. Furthermore, we identify and analyze the main factors limiting the device efficiency and suggest a few approaches for future improvements of such photovoltaic devices.

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DOI:https://doi.org/10.1021/acsenergylett.9b01619

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Citation Information:

In this Letter, we report the alloying of the high-band-gap photovoltaic elemental absorber selenium with the isomorphic low-band-gap semiconductor tellurium to tune the band gap energy of Se1–xTex to the optimal value for photovoltaic absorber. Photovoltaic devices based on crystalline Se1–xTex alloys are promising candidates for extremely cheap and highly scalable solar cells, offering simple low-temperature fabrication and intrinsic stability. We explore the electro-optical properties of Se1–xTex alloys and show that the tellurium red shifts the band gap in a nonlinear manner, faster than expected, due to significantly nonlinear change of the conduction band energy, allowing them to easily reach the desired band gap of 1.2–1.4 eV. On the basis of these results, we rationally design and demonstrate the fabrication of simple Se1–xTex photovoltaic devices, showing significantly improved current density in comparison to pure selenium. Furthermore, we identify and analyze the main factors limiting the device efficiency and suggest a few approaches for future improvements of such photovoltaic devices.

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GB/T 7714-2015 [1] Ido Hadar, Xiaobing Hu, ZhongZhen Luo, et al. ACS Energy Letters, 2019(4). DOI:10.1021/acsenergylett.9b01619.
MLA [1] Ido Hadar, et al., ACS Energy Letters, no. 4, 2019, https://doi.org/10.1021/acsenergylett.9b01619.
APA [1] Ido Hadar, Xiaobing Hu, ZhongZhen Luo, Vinayak P. Dravid, & Mercouri G. Kanatzidis. (2019). ACS Energy Letters(4). https://doi.org/10.1021/acsenergylett.9b01619
IEEE [1] Ido Hadar, Xiaobing Hu, ZhongZhen Luo, Vinayak P. Dravid, and Mercouri G. Kanatzidis, ACS Energy Letters, no. 4, 2019, doi: 10.1021/acsenergylett.9b01619.