Optoelectronic Switching Memory Based on ZnO Nanoparticle/Polymer Nanocomposites AITranslate

Basic Information:

DOI：https://doi.org/10.1021/acsapm.2c02034

Chinese Library Classification Number:

Citation Information:

Optoelectronic switching memories are emerging as practical candidates for applications of optically tunable neuromorphic computing systems and artificial vision systems. Here, we report on the fabrication of an optoelectronic switching memory device based on semiconducting zinc oxide nanoparticles (ZnO NPs) embedded within a photoactive azobenzene polymer. The device shows electronic resistive switching and a reversible optical switching effect upon changing the polarization of the applied light. Optical illumination with circularly/linearly polarized light expands/contracts the nanocomposite film and modifies the conduction pathway, facilitated by the presence of the ZnO NPs, as a semiconductor material within the insulating poly(disperse red 1 acrylate) material. The carrier transport and the operating switching mechanism are explained on the basis of the current–voltage (I–V) results. The reported device enables optical controllable resistive switching properties that may find applications in visual systems integrated within artificial intelligence networks.