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Vapor Phase Infiltration Improves Thermal Stability of Organic Layers in Perovskite Solar Cells AITranslate

Georgia Institute of Technology; Georgia Institute of Technology; Georgia Institute of Technology; Georgia Institute of Technology; Georgia Institute of Technology; Georgia Institute of Technology; Brookhaven National Laboratory; Georgia Institute of Technology; Georgia Institute of Technology; Georgia Institute of Technology; Georgia Institute of Technology; Georgia Institute of Technology
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Publisher: ACS
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Abstract AITranslate

Despite the rapid increase in power conversion efficiency (PCE) of perovskite solar cells (PSCs) over the past decade, stability remains a major roadblock to commercialization. This work shows vapor phase infiltration (VPI) as a tool to create hybrid organic–inorganic layers that improve the stability of organic charge transport layers, such as hole-selective spiro-OMeTAD in PSCs and in other organic electronic devices. Using X-ray photoelectron spectroscopy (XPS), ultraviolet photoelectron spectroscopy (UPS), and grazing incident wide-angle X-ray scattering (GIWAXS), we identify that infiltration of TiOx via VPI hinders the crystallization of the spiro-OMeTAD layer by likely preventing the π–π stacking of the molecules. Infiltrated PSCs retained more than 80% of their original efficiency after an operando stability test of 200 h at 75 °C, double the efficiency retained by devices without infiltration, in which the efficiency rapidly decreases in the first 50 h. This work provides a blueprint for using VPI to stabilize organic charge transport layers via prevention of π–π stacking leading to deleterious crystallization that shortens device lifetimes.

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DOI:https://doi.org/10.1021/acsenergylett.2c02272

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Citation Information:

Despite the rapid increase in power conversion efficiency (PCE) of perovskite solar cells (PSCs) over the past decade, stability remains a major roadblock to commercialization. This work shows vapor phase infiltration (VPI) as a tool to create hybrid organic–inorganic layers that improve the stability of organic charge transport layers, such as hole-selective spiro-OMeTAD in PSCs and in other organic electronic devices. Using X-ray photoelectron spectroscopy (XPS), ultraviolet photoelectron spectroscopy (UPS), and grazing incident wide-angle X-ray scattering (GIWAXS), we identify that infiltration of TiOx via VPI hinders the crystallization of the spiro-OMeTAD layer by likely preventing the π–π stacking of the molecules. Infiltrated PSCs retained more than 80% of their original efficiency after an operando stability test of 200 h at 75 °C, double the efficiency retained by devices without infiltration, in which the efficiency rapidly decreases in the first 50 h. This work provides a blueprint for using VPI to stabilize organic charge transport layers via prevention of π–π stacking leading to deleterious crystallization that shortens device lifetimes.

quote

GB/T 7714-2015 [1] AndrésFelipe CastroMéndez, Jamie P. Wooding, Selma Fairach, et al. ACS Energy Letters, 2023(8). DOI:10.1021/acsenergylett.2c02272.
MLA [1] AndrésFelipe CastroMéndez, et al., ACS Energy Letters, no. 8, 2023, https://doi.org/10.1021/acsenergylett.2c02272.
APA [1] AndrésFelipe CastroMéndez, Jamie P. Wooding, Selma Fairach, Carlo A. R. Perini, Emily K. McGuinness, Jacob N. Vagott, Ruipeng Li, Sanggyun Kim, Vivek Brahmatewari, Lucille V. Dentice, Mark D. Losego, & JuanPablo CorreaBaena. (2023). ACS Energy Letters(8). https://doi.org/10.1021/acsenergylett.2c02272
IEEE [1] AndrésFelipe CastroMéndez, Jamie P. Wooding, Selma Fairach, Carlo A. R. Perini, Emily K. McGuinness, Jacob N. Vagott, Ruipeng Li, Sanggyun Kim, Vivek Brahmatewari, Lucille V. Dentice, Mark D. Losego, and JuanPablo CorreaBaena, ACS Energy Letters, no. 8, 2023, doi: 10.1021/acsenergylett.2c02272.