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Probing resistive switching in HfO2/Al2O3 bilayer oxides using in-situ transmission electron microscopy AITranslate

Alok Ranjan; Hejun Xu; Chaolun Wang; Joel Molina; Xing Wu; Hui Zhang; Litao Sun; Junhao Chu; Kin Leong Pey;
Chalmers University of Technology; East China Normal University; East China Normal University; National Institute of Astrophysics; East China Normal University; Southeast University; Southeast University; East China Normal University; Singapore University of Technology and Design
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Publisher: Elsevier
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Abstract AITranslate

Highlights • Probing resistive switching in hafnium dioxide (HfO2) and aluminum oxide (Al2O3) bilayered stacks using in-situ transmission electron microscopy. • Conductance of the HfO2/Al2O3 stack changes gradually upon electrical stressing which is related to the formation of extended nanoscale physical defects at the HfO2/Al2O3 interface and the migration and re-crystallization of Al into the oxide bulk. • Two competing physical mechanisms exist - including redistribution of oxygen ions and the migration of Al species during the switching process. • Low diffusion barrier of the active Al electrode causes severe Al migration in the bi-layered oxides leading to the device to fail in resetting. In this work, we investigate the resistive switching in hafnium dioxide (HfO2) and aluminum oxide (Al2O3) bilayered stacks using in-situ transmission electron microscopy and X-ray energy dispersive spectroscopy. Conductance of the HfO2/Al2O3 stack changes gradually upon electrical stressing which is related to the formation of extended nanoscale physical defects at the HfO2/Al2O3 interface and the migration and re-crystallization of Al into the oxide bulk. The results suggest two competing physical mechanisms including the redistribution of oxygen ions and the migration of Al species from the Al electrode during the switching process. While the HfO2/Al2O3 bilayered stack appears to be a good candidate for RRAM technology, the low diffusion barrier of the active Al electrode causes severe Al migration in the bi-layered oxides leading to the device to fail in resetting, and thereby, largely limiting the overall switching performance and material reliability. Graphical abstract Download : Download high-res image (191KB) Download : Download full-size image

KeyWords AITranslate

Diffusion Barrier Metal migration Reliability Resistive Memory TEM
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DOI：https://doi.org/10.1016/j.apmt.2023.101739

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Citation Information:

Highlights • Probing resistive switching in hafnium dioxide (HfO2) and aluminum oxide (Al2O3) bilayered stacks using in-situ transmission electron microscopy. • Conductance of the HfO2/Al2O3 stack changes gradually upon electrical stressing which is related to the formation of extended nanoscale physical defects at the HfO2/Al2O3 interface and the migration and re-crystallization of Al into the oxide bulk. • Two competing physical mechanisms exist - including redistribution of oxygen ions and the migration of Al species during the switching process. • Low diffusion barrier of the active Al electrode causes severe Al migration in the bi-layered oxides leading to the device to fail in resetting. In this work, we investigate the resistive switching in hafnium dioxide (HfO2) and aluminum oxide (Al2O3) bilayered stacks using in-situ transmission electron microscopy and X-ray energy dispersive spectroscopy. Conductance of the HfO2/Al2O3 stack changes gradually upon electrical stressing which is related to the formation of extended nanoscale physical defects at the HfO2/Al2O3 interface and the migration and re-crystallization of Al into the oxide bulk. The results suggest two competing physical mechanisms including the redistribution of oxygen ions and the migration of Al species from the Al electrode during the switching process. While the HfO2/Al2O3 bilayered stack appears to be a good candidate for RRAM technology, the low diffusion barrier of the active Al electrode causes severe Al migration in the bi-layered oxides leading to the device to fail in resetting, and thereby, largely limiting the overall switching performance and material reliability. Graphical abstract Download : Download high-res image (191KB) Download : Download full-size image

quote

GB/T 7714-2015 [1] Alok Ranjan, Hejun Xu, Chaolun Wang, et al. Applied Materials Today, 2023(31). DOI:10.1016/j.apmt.2023.101739.
MLA [1] Alok Ranjan, et al., Applied Materials Today, no. 31, 2023, https://doi.org/10.1016/j.apmt.2023.101739.
APA [1] Alok Ranjan, Hejun Xu, Chaolun Wang, Joel Molina, Xing Wu, Hui Zhang, Litao Sun, Junhao Chu, & Kin Leong Pey. (2023). Applied Materials Today(31). https://doi.org/10.1016/j.apmt.2023.101739
IEEE [1] Alok Ranjan, Hejun Xu, Chaolun Wang, Joel Molina, Xing Wu, Hui Zhang, Litao Sun, Junhao Chu, and Kin Leong Pey, Applied Materials Today, no. 31, 2023, doi: 10.1016/j.apmt.2023.101739. keywords: {Diffusion Barrier;Metal migration;Reliability;Resistive Memory;TEM}