Linker Aromaticity Reduces Band Dispersion in 2D Conductive Metal–Organic Frameworks AITranslate
Abstract AITranslate
All 2D electrically conductive metal–organic frameworks (MOFs) are constructed from hexasubstituted aromatics that oxidize during self-assembly. Since electrical conduction is thought to occur through the ligand π-system, but aromaticity itself results in stabilized π-electrons, the delocalization of ligand wavefunctions should be inversely related to the ligand π-stability. That is, aromatic π-electrons should prefer to localize on a single linker rather than delocalize to form a curved band in the MOF. Here, we use a combination of NICS-xy scans and bulk electronic band structure calculations to show that the extent of residual aromaticity in the oxidized linker is a good predictor for electronic localization in the resultant MOF. Thus, ligands that feature antiaromatic π-systems in the oxidation state found within the MOF should yield increased band curvature, a target parameter that affects charge mobility in high performing electrical conductors.
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DOI:https://doi.org/10.1021/acsmaterialslett.3c00122
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All 2D electrically conductive metal–organic frameworks (MOFs) are constructed from hexasubstituted aromatics that oxidize during self-assembly. Since electrical conduction is thought to occur through the ligand π-system, but aromaticity itself results in stabilized π-electrons, the delocalization of ligand wavefunctions should be inversely related to the ligand π-stability. That is, aromatic π-electrons should prefer to localize on a single linker rather than delocalize to form a curved band in the MOF. Here, we use a combination of NICS-xy scans and bulk electronic band structure calculations to show that the extent of residual aromaticity in the oxidized linker is a good predictor for electronic localization in the resultant MOF. Thus, ligands that feature antiaromatic π-systems in the oxidation state found within the MOF should yield increased band curvature, a target parameter that affects charge mobility in high performing electrical conductors.
quote
| GB/T 7714-2015 | [1] Monique C. Demuth, Christopher H. Hendon. ACS Materials Letters, 2023(5). DOI:10.1021/acsmaterialslett.3c00122. |
| MLA | [1] Monique C. Demuth, and Christopher H. Hendon. ACS Materials Letters, no. 5, 2023, https://doi.org/10.1021/acsmaterialslett.3c00122. |
| APA | [1] Monique C. Demuth, & Christopher H. Hendon. (2023). ACS Materials Letters(5). https://doi.org/10.1021/acsmaterialslett.3c00122 |
| IEEE | [1] Monique C. Demuth and Christopher H. Hendon, ACS Materials Letters, no. 5, 2023, doi: 10.1021/acsmaterialslett.3c00122. |
