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Voltage-Dependent Photoluminescence and How It Correlates with the Fill Factor and Open-Circuit Voltage in Perovskite Solar Cells AITranslate

University of Potsdam; University of Groningen; University of Potsdam; University of Potsdam; University of Groningen; University of Potsdam
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Publisher: ACS
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Abstract AITranslate

Optimizing the photoluminescence (PL) yield of a solar cell has long been recognized as a key principle to maximize the power conversion efficiency. While PL measurements are routinely applied to perovskite films and solar cells under open-circuit conditions (VOC), it remains unclear how the emission depends on the applied voltage. Here, we performed PL(V) measurements on perovskite cells with different hole transport layer thicknesses and doping concentrations, resulting in remarkably different fill factors (FFs). The results reveal that PL(V) mirrors the current–voltage (JV) characteristics in the power-generating regime, which highlights an interesting correlation between radiative and nonradiative recombination losses. In particular, high FF devices show a rapid quenching of PL(V) from open-circuit to the maximum power point. We conclude that, while the PL has to be maximized at VOC, at lower biases < VOC, the PL must be rapidly quenched as charges need to be extracted prior to recombination.

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DOI:https://doi.org/10.1021/acsenergylett.9b02262

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Citation Information:

Optimizing the photoluminescence (PL) yield of a solar cell has long been recognized as a key principle to maximize the power conversion efficiency. While PL measurements are routinely applied to perovskite films and solar cells under open-circuit conditions (VOC), it remains unclear how the emission depends on the applied voltage. Here, we performed PL(V) measurements on perovskite cells with different hole transport layer thicknesses and doping concentrations, resulting in remarkably different fill factors (FFs). The results reveal that PL(V) mirrors the current–voltage (JV) characteristics in the power-generating regime, which highlights an interesting correlation between radiative and nonradiative recombination losses. In particular, high FF devices show a rapid quenching of PL(V) from open-circuit to the maximum power point. We conclude that, while the PL has to be maximized at VOC, at lower biases < VOC, the PL must be rapidly quenched as charges need to be extracted prior to recombination.

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GB/T 7714-2015 [1] Martin Stolterfoht, Vincent M. Le Corre, Markus Feuerstein, et al. ACS Energy Letters, 2019(4). DOI:10.1021/acsenergylett.9b02262.
MLA [1] Martin Stolterfoht, et al., ACS Energy Letters, no. 4, 2019, https://doi.org/10.1021/acsenergylett.9b02262.
APA [1] Martin Stolterfoht, Vincent M. Le Corre, Markus Feuerstein, Pietro Caprioglio, L. Jan Anton Koster, & Dieter Neher. (2019). ACS Energy Letters(4). https://doi.org/10.1021/acsenergylett.9b02262
IEEE [1] Martin Stolterfoht, Vincent M. Le Corre, Markus Feuerstein, Pietro Caprioglio, L. Jan Anton Koster, and Dieter Neher, ACS Energy Letters, no. 4, 2019, doi: 10.1021/acsenergylett.9b02262.