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Reducing Carrier Density in Formamidinium Tin Perovskites and Its Beneficial Effects on Stability and Efficiency of Perovskite Solar Cells AITranslate

Seon Joo Lee; Seong Sik Shin; Jino Im; Tae Kyu Ahn; Jun Hong Noh; Nam Joong Jeon; Sang Il Seok; Jangwon Seo;
Korea Research Institute of Chemical Technology (KRICT); Korea Research Institute of Chemical Technology (KRICT); Korea Research Institute of Chemical Technology (KRICT); Sungkyunkwan University; Korea University; Korea Research Institute of Chemical Technology (KRICT); Ulsan National Institute of Science and Technology (UNIST); Korea Research Institute of Chemical Technology (KRICT)
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Abstract AITranslate

In Sn-based halide perovskite solar cells (PSCs), the oxidation of Sn2+ to Sn4+ under ambient air leads to unwanted p-type doping in the perovskite film, which is a main reason for increased background carrier density and low efficiency. Here, we find that the introduction of bromide into formamidinium tin iodide (CH(NH2)2SnI3, FASnI3) lattice significantly lowers the carrier density of perovskite absorber, which is thought to be a result of reduction of Sn vacancies. It reduces the leakage current of devices, increases recombination lifetime, and finally improves open-circuit voltage and fill factor of the resulting devices employing mesoporous TiO2 as an electron transport layer. Consequently, a high power conversion efficiency (PCE) of 5.5% is achieved with an average PCE of 5%, and after encapsulation the devices are highly stable over 1000 h under continuous one sun illumination including the ultraviolet region. This study suggests a simple approach for improving stability and efficiency in FASnI3-based PSCs.

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DOI：https://doi.org/10.1021/acsenergylett.7b00976

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Citation Information:

In Sn-based halide perovskite solar cells (PSCs), the oxidation of Sn2+ to Sn4+ under ambient air leads to unwanted p-type doping in the perovskite film, which is a main reason for increased background carrier density and low efficiency. Here, we find that the introduction of bromide into formamidinium tin iodide (CH(NH2)2SnI3, FASnI3) lattice significantly lowers the carrier density of perovskite absorber, which is thought to be a result of reduction of Sn vacancies. It reduces the leakage current of devices, increases recombination lifetime, and finally improves open-circuit voltage and fill factor of the resulting devices employing mesoporous TiO2 as an electron transport layer. Consequently, a high power conversion efficiency (PCE) of 5.5% is achieved with an average PCE of 5%, and after encapsulation the devices are highly stable over 1000 h under continuous one sun illumination including the ultraviolet region. This study suggests a simple approach for improving stability and efficiency in FASnI3-based PSCs.

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GB/T 7714-2015 [1] Seon Joo Lee, Seong Sik Shin, Jino Im, et al. ACS Energy Letters, 2018(3). DOI:10.1021/acsenergylett.7b00976.
MLA [1] Seon Joo Lee, et al., ACS Energy Letters, no. 3, 2018, https://doi.org/10.1021/acsenergylett.7b00976.
APA [1] Seon Joo Lee, Seong Sik Shin, Jino Im, Tae Kyu Ahn, Jun Hong Noh, Nam Joong Jeon, Sang Il Seok, & Jangwon Seo. (2018). ACS Energy Letters(3). https://doi.org/10.1021/acsenergylett.7b00976
IEEE [1] Seon Joo Lee, Seong Sik Shin, Jino Im, Tae Kyu Ahn, Jun Hong Noh, Nam Joong Jeon, Sang Il Seok, and Jangwon Seo, ACS Energy Letters, no. 3, 2018, doi: 10.1021/acsenergylett.7b00976.