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Precursor Solution Aging: A Universal Strategy Modulating Crystallization of Two-Dimensional Tin Halide Perovskite Films AITranslate

Pohang University of Science and Technology (POSTECH); Pohang University of Science and Technology (POSTECH); Pohang University of Science and Technology (POSTECH); Korea Research Institute of Chemical Technology (KRICT); Chungbuk National University; Northwestern University; Northwestern University; Pohang University of Science and Technology (POSTECH)
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Publisher: ACS
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Abstract AITranslate

Two-dimensional (2D) tin (Sn2+)-based perovskites have achieved remarkable advancements in (opto)electronic devices. However, fabricating high-quality and reproducible Sn halide perovskite thin films remains challenging due to uncontrollably fast crystallization. To overcome this issue, dimethyl sulfoxide has been incorporated as an indispensable strategy to form Lewis acid–base adducts but also has been proven to induce an irreversible Sn2+ oxidization effect. As the crystalline films grow directly from solution, a better understanding of precursor colloidal chemistry and the film formation process is critical. In this study, we report a universal solution aging approach to fabricate high-quality and reliable 2D Ruddlesden–Popper and Dion–Jacobson Sn2+ perovskite films and devices. The proper solution aging stabilizes the precursor colloids by eliminating aggregated complex and unreacted precursor clusters in the fresh precursor, leading to homogeneous nucleation/crystallization and film growth. The precursor aging reduced film defect density by nearly 2 orders of magnitude and improved charge transport mobility by over 5 times. This study can inspire the community to understand the deposition mechanism for high-quality Sn2+ perovskite thin films and promote the development of high-performance and reproducible Sn2+ perovskite based (opto)electronic devices.

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DOI:https://doi.org/10.1021/acsenergylett.3c00694

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Two-dimensional (2D) tin (Sn2+)-based perovskites have achieved remarkable advancements in (opto)electronic devices. However, fabricating high-quality and reproducible Sn halide perovskite thin films remains challenging due to uncontrollably fast crystallization. To overcome this issue, dimethyl sulfoxide has been incorporated as an indispensable strategy to form Lewis acid–base adducts but also has been proven to induce an irreversible Sn2+ oxidization effect. As the crystalline films grow directly from solution, a better understanding of precursor colloidal chemistry and the film formation process is critical. In this study, we report a universal solution aging approach to fabricate high-quality and reliable 2D Ruddlesden–Popper and Dion–Jacobson Sn2+ perovskite films and devices. The proper solution aging stabilizes the precursor colloids by eliminating aggregated complex and unreacted precursor clusters in the fresh precursor, leading to homogeneous nucleation/crystallization and film growth. The precursor aging reduced film defect density by nearly 2 orders of magnitude and improved charge transport mobility by over 5 times. This study can inspire the community to understand the deposition mechanism for high-quality Sn2+ perovskite thin films and promote the development of high-performance and reproducible Sn2+ perovskite based (opto)electronic devices.

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GB/T 7714-2015 [1] Youjin Reo, Taesu Choi, JiYoung Go, et al. ACS Energy Letters, 2023(8). DOI:10.1021/acsenergylett.3c00694.
MLA [1] Youjin Reo, et al., ACS Energy Letters, no. 8, 2023, https://doi.org/10.1021/acsenergylett.3c00694.
APA [1] Youjin Reo, Taesu Choi, JiYoung Go, Seungju Jeon, Bogyu Lim, Huihui Zhu, Ao Liu, & YongYoung Noh. (2023). ACS Energy Letters(8). https://doi.org/10.1021/acsenergylett.3c00694
IEEE [1] Youjin Reo, Taesu Choi, JiYoung Go, Seungju Jeon, Bogyu Lim, Huihui Zhu, Ao Liu, and YongYoung Noh, ACS Energy Letters, no. 8, 2023, doi: 10.1021/acsenergylett.3c00694.