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P-Type Electrochemical Doping Can Occur by Cation Expulsion in a High-Performing Polymer for Organic Electrochemical Transistors AITranslate

University of Washington; University of Washington; University of Washington; University of Washington; University of Washington; University of Washington
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Publisher: ACS
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Abstract AITranslate

We investigate the mechanism of ion-dependent charge compensation during electrochemical oxidation (doping) of the model mixed ionic/electronic transporting polythiophene derivative poly(3-{[2-(2-methoxyethoxy)ethoxy]methyl}thiophene-2,5-diyl) (P3MEEMT). Using a combination of electrochemical quartz microbalance gravimetry and glow discharge optical emission spectroscopy, we show that charge compensation during polymer redox processes proceeds via a cation-dependent mechanism. For p-type polymer oxidation in certain electrolytes, charge compensation is achieved by both eventual injection of anions into the film, as well as initial expulsion of cations from the film. We compare doping mechanisms for a variety of electrolyte salts including potassium chloride, tetrabutylammonium chloride, potassium hexafluorophosphate (KPF6), and tetrabutylammonium hexafluorophosphate. For the electrolyte KPF6, both the cations and anions coexist in the water-swelled polymer even prior to application of electrical bias. Our data indicate that electrochemical doping (hole injection into the polymer and ionic charge compensation) proceeds via the following mechanism: (1) hydration of the neutral film by electrolyte (water, cations, anions), (2) cation (K+) expulsion from the film upon initial application of an oxidative bias, and (3) anion injection into the film at higher oxidation/doping levels (>∼2 × 1020/cm3). Understanding the mechanism of charge compensation during the doping process should allow for the design of improved mixed ionic/electronic conductors for use in applications ranging from organic supercapacitors and redox flow batteries to bioelectronic sensors, thermoelectrics, and devices for neuromorphic computing.

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DOI:https://doi.org/10.1021/acsmaterialslett.9b00501

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We investigate the mechanism of ion-dependent charge compensation during electrochemical oxidation (doping) of the model mixed ionic/electronic transporting polythiophene derivative poly(3-{[2-(2-methoxyethoxy)ethoxy]methyl}thiophene-2,5-diyl) (P3MEEMT). Using a combination of electrochemical quartz microbalance gravimetry and glow discharge optical emission spectroscopy, we show that charge compensation during polymer redox processes proceeds via a cation-dependent mechanism. For p-type polymer oxidation in certain electrolytes, charge compensation is achieved by both eventual injection of anions into the film, as well as initial expulsion of cations from the film. We compare doping mechanisms for a variety of electrolyte salts including potassium chloride, tetrabutylammonium chloride, potassium hexafluorophosphate (KPF6), and tetrabutylammonium hexafluorophosphate. For the electrolyte KPF6, both the cations and anions coexist in the water-swelled polymer even prior to application of electrical bias. Our data indicate that electrochemical doping (hole injection into the polymer and ionic charge compensation) proceeds via the following mechanism: (1) hydration of the neutral film by electrolyte (water, cations, anions), (2) cation (K+) expulsion from the film upon initial application of an oxidative bias, and (3) anion injection into the film at higher oxidation/doping levels (>∼2 × 1020/cm3). Understanding the mechanism of charge compensation during the doping process should allow for the design of improved mixed ionic/electronic conductors for use in applications ranging from organic supercapacitors and redox flow batteries to bioelectronic sensors, thermoelectrics, and devices for neuromorphic computing.

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GB/T 7714-2015 [1] Lucas Q. Flagg, Connor G. Bischak, Ramsess J. Quezada, et al. ACS Materials Letters, 2020(2). DOI:10.1021/acsmaterialslett.9b00501.
MLA [1] Lucas Q. Flagg, et al., ACS Materials Letters, no. 2, 2020, https://doi.org/10.1021/acsmaterialslett.9b00501.
APA [1] Lucas Q. Flagg, Connor G. Bischak, Ramsess J. Quezada, Jonathan W. Onorato, Christine. K. Luscombe, & David S. Ginger. (2020). ACS Materials Letters(2). https://doi.org/10.1021/acsmaterialslett.9b00501
IEEE [1] Lucas Q. Flagg, Connor G. Bischak, Ramsess J. Quezada, Jonathan W. Onorato, Christine. K. Luscombe, and David S. Ginger, ACS Materials Letters, no. 2, 2020, doi: 10.1021/acsmaterialslett.9b00501.