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Influence of ZnO Buffer Layer on Photoelectric Properties of W-doped VO_2 Thin Film AITranslate

College of Materials Science and Engineering, Hefei University of Technology;College of Materials Science and Engineering, Hefei University of Technology;College of Materials Science and Engineering, Hefei University of Technology;College of Materials Science and Engineering, Hefei University of Technology;College of Materials Science and Engineering, Hefei University of Technology;College of Materials Science and Engineering, Hefei University of Technology;College of Materials Science and Engineering, Hefei University of Technology
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Publisher: Editorial Office of Rare Metals and Cemented Carbides
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Abstract AITranslate

The W-VO2 monolayer thin film and ZnO/W-VO2 bilayer thin film were respectively prepared by magnetron sputtering on glass substrates, and then annealed in Ar atmosphere. Their crystal structures, resistance-temperature curves, surface morphologies, visible light transmittance and infrared transmittance were measured with X-ray diffractometer, LCR tester, scanning electron microscope, UV-Vis spectrophotometer and infrared spectrometer. The results show that the phase transition temperature of ZnO/W-VO2 bilayer thin film decreases to 35 ℃ ,thin film growth is more compact and uniform,its visible light transmittance increases by about 23% ,and infrared light shielding effect is better.

KeyWords AITranslate

ZnO/W-VO2 bilayer thin film W-VO2 monolayer thin film phase transition temperature resistance-temperature curve visible light transmittance infrared transmittance

1周矗,李合琴,刘心同.用于红外激光防护的VO_2薄膜的研究进展[J].红外,2013,34(11):13-17. 被引量:3

2方应翠,陈长琦,朱武,王先路,干蜀毅.二氧化钒薄膜在智能窗方面应用研究[J].真空,2003,40(2):16-18. 被引量:17

3邵林飞,李合琴,范文宾,宋泽润.VO_x薄膜的制备、电阻-温度特性及结构研究[J].红外,2009,30(11):30-34. 被引量:5

4聂竹华,李合琴,储汉奇,都智,宋泽润.磁控溅射工艺对VO_x薄膜结构和性能的影响[J].红外,2010,31(9):9-13. 被引量:2

5何琼,许向东,温粤江,蒋亚东,马春前,敖天宏,黄锐,孙自强.溶胶-凝胶法制备氧化钒薄膜的结构及特性研究[J].实验技术与管理,2013,30(3):35-38. 被引量:10

6吴淼,胡明,张之圣,刘志刚,温宇峰.真空蒸发法制备氧化钒薄膜的研究[J].硅酸盐通报,2005,24(1):17-19. 被引量:10

7Louloudakis D, Vernardou D, Spanakis E, et al. Thermo- chromic vanadium oxide coatings grown by APCVD at low temperatures [J]. Physics Procedia, 2013,46 :137- 141.

8吕晓庆,李合琴,周矗,崔跃,何蓓,刘涛.TiO_2/VO_2双层薄膜的制备及光电性能研究[J].合肥工业大学学报:自然科学版,2012,35(12):1659-1661. 被引量:3

9胡庚祥,蔡殉,戎咏华.材料科学基础(第二版)[M].上海:上海交通大学出版社,2006.124-127.

10刘涛,李合琴,刘丹,武大伟,吕晓庆,宋泽润.TiO_2缓冲层对掺钨氧化钒热敏智能玻璃的制备及性能影响[J].真空,2011,48(6):21-24. 被引量:4

1邵林飞,李合琴,范文宾,宋泽润.VO_x薄膜的制备、电阻-温度特性及结构研究[J].红外,2009,30(11):30-34. 被引量:5

2黄维刚,林华,涂铭旌.VOC_2O_4·H_2O热分解制备纳米VO_2粉体及相变特性[J].功能材料,2006,37(3):440-441. 被引量:7

3孙立,邓海金,李明.不同测试位向下C/C复合材料磁电阻效应[J].复合材料学报,2003,20(3):47-51. 被引量:1

4郑星卓,季铁正,张教强,杨建锋,李萍,谷敬凯.碳酸钙对炭黑/环氧树脂复合材料电性能的影响[J].航空材料学报,2013,33(5):61-65. 被引量:5

5冯图,陈怀礼,赵慧芳.热处理温度对氧化铟薄膜特性的影响[J].传感器世界,2012,18(3):6-9.

6陈红燕,黄华波.表面处理对碳纤维复合材料导电性的影响[J].中南民族大学学报:自然科学版,2014,33(1):58-61.

7冯真,熊鹰,王兵,刘学维,廖健淞,许立.二氧化碳对MPCVD金刚石光学膜结构及红外透过率的影响[J].稀有金属,2015,39(5):428-434. 被引量:5

8朱慧群,丁瑞钦,蔡继业,胡怡.同质缓冲层对ZnO薄膜光学性质的影响[J].电子元件与材料,2006,25(7):48-51. 被引量:3

9吕晓庆,李合琴,周矗,崔跃,何蓓,刘涛.TiO_2/VO_2双层薄膜的制备及光电性能研究[J].合肥工业大学学报:自然科学版,2012,35(12):1659-1661. 被引量:3

10程萍,田永涛,王文闯,徐玉睿,何豪,王新昌,李新建.ZnO纳米线阵列/p-Si异质结的合成及其整流特性[J].郑州大学学报:理学版,2011,43(3):87-90. 被引量:1

Basic Information:

DOI:

Chinese Library Classification Number:TB43[一般工业技术]

Citation Information:

The W-VO2 monolayer thin film and ZnO/W-VO2 bilayer thin film were respectively prepared by magnetron sputtering on glass substrates, and then annealed in Ar atmosphere. Their crystal structures, resistance-temperature curves, surface morphologies, visible light transmittance and infrared transmittance were measured with X-ray diffractometer, LCR tester, scanning electron microscope, UV-Vis spectrophotometer and infrared spectrometer. The results show that the phase transition temperature of ZnO/W-VO2 bilayer thin film decreases to 35 ℃ ,thin film growth is more compact and uniform,its visible light transmittance increases by about 23% ,and infrared light shielding effect is better.

quote

GB/T 7714-2015 [1] ZHOU Chu, LI He-qin, LIU Xin-tong, et al. Influence of ZnO Buffer Layer on Photoelectric Properties of W-doped VO_2 Thin Film[J]. Rare Metals and Cemented Carbides, 2014(5): 39-42.
MLA [1] ZHOU Chu, et al., "Influence of ZnO Buffer Layer on Photoelectric Properties of W-doped VO_2 Thin Film." Rare Metals and Cemented Carbides, no. 5, 2014, pp. 39-42.
APA [1] ZHOU Chu, LI He-qin, LIU Xin-tong, XU Yu-hao, YE Nan, QIAN Man-man, & CHENG Cong. (2014). Influence of ZnO Buffer Layer on Photoelectric Properties of W-doped VO_2 Thin Film. Rare Metals and Cemented Carbides(5), 39-42.
IEEE [1] ZHOU Chu, LI He-qin, LIU Xin-tong, XU Yu-hao, YE Nan, QIAN Man-man, and CHENG Cong, "Influence of ZnO Buffer Layer on Photoelectric Properties of W-doped VO_2 Thin Film," Rare Metals and Cemented Carbides, no. 5, pp. 39-42, 2014. keywords: {ZnO/W-VO2 bilayer thin film;W-VO2 monolayer thin film;phase transition temperature;resistance-temperature curve;visible light transmittance;infrared transmittance}