Isothermal Heteroepitaxy of Ge1–xSnx Structures for Electronic and Photonic Applications Isothermal Heteroepitaxy of Ge1–xSnx Structures for Electronic and Photonic Applications AITranslate

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DOI：https://doi.org/10.1021/acsaelm.3c00112

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Epitaxy of semiconductor-based quantum well structures is a challenging task since it requires precise control of the deposition at the submonolayer scale. In the case of Ge1–xSnx alloys, the growth is particularly demanding since the lattice strain and the process temperature greatly impact the composition of the epitaxial layers. In this paper, the realization of high-quality pseudomorphic Ge1–xSnx layers with Sn content ranging from 6 at. % up to 15 at. % using isothermal processes in an industry-compatible reduced-pressure chemical vapor deposition reactor is presented. The epitaxy of Ge1–xSnx layers has been optimized for a standard process offering a high Sn concentration at a large process window. By varying the N2 carrier gas flow, isothermal heterostructure designs suitable for quantum transport and spintronic devices are obtained.