Improved Switching Uniformity of SCLC-RRAM Using the Vertically Formed Nanoscale 2DEG Electrode and Control of Oxygen Vacancy Distribution Improved Switching Uniformity of SCLC-RRAM Using the Vertically Formed Nanoscale 2DEG Electrode and Control of Oxygen Vacancy Distribution AITranslate

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DOI：https://doi.org/10.1021/acsaelm.3c01106

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In recent years, many studies have focused on addressing the switching variability of filamentary switching resistive random access memory (F-RRAM). This problem persists owing to the inherent unpredictability in the formation and rupture of filaments during the resistive switching process. In this study, we developed a method for using space charge limited current (SCLC) switching-based RRAM (S-RRAM) in a highly scaled cell area by revealing the changes in the switching mechanism of TiO2-based RRAM based on the oxygen vacancy (Vo) concentration. Experimental results revealed that the vertically oriented two-dimensional (2D) electron gas (V-2DEG) electrode significantly minimized the device cell area to 300 nm2. This, in turn, facilitated a precise manipulation of the Vo concentration in TiO2 via thermal migration of Vo during the annealing phase. Consequently, an S-RRAM with excellent switching characteristics was implemented under the condition of rapid thermal annealing (RTA) at 300 °C for 1 min. The S-RRAM device, driven by electron trapping and detrapping at the Vo trap site, exhibited outstanding switching uniformity, a reduced operating voltage (<1 V), and a substantial on/off ratio (>40). The impressive switching performance and area scalability of the S-RRAM afforded by the Vo concentration-controllable V-2DEG electrode configuration hold significant potential for future high-density nonvolatile memory applications.