Recovering the Intrinsic Electrical Property of a Graphene Field-Effect Transistor by Interface Cleaning Technology Recovering the Intrinsic Electrical Property of a Graphene Field-Effect Transistor by Interface Cleaning Technology AITranslate

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DOI：https://doi.org/10.1021/acsaelm.3c00187

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Because of the two-dimensional material, the graphene field-effect transistor (GFET) is sensitive to the external environment. Surface contamination by photoresist residues originated from lithography usually introduces extra scattering and uncontrolled hole doping, resulting in the modification of the intrinsic graphene electric properties. Here, we developed an interface cleaning technology to circumvent the photoresist residue problem, which is suitable for the large-scale production of GFETs and is also compatible with the standard complementary metal-oxide semiconductor (CMOS) process. Different from the traditional top-down fabricated GFETs, the source/drain electrodes were fabricated on the substrate before the graphene film was transferred. This technique can avoid the photoresist residues in the metal electrode lithography process and lead to the cleaner interface between graphene and the contact metal. Subsequently, a removable Al layer was deposited on the sample to protect the graphene channel from the photoresist residues for the further etching process. Benefiting from the clean and residue-free graphene surface, the intrinsic characteristic of GFET with the Dirac point near zero voltage was obtained, and the field-effect carrier mobility was improved by 33%. Our surface clean method provides a simple way to enhance the electrical property of GFETs, which can be used in the future very large-scale integration electronic applications.