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Acoustically Operated Excitonic Transistor Using Poly(3-hexylthiophene) Acoustically Operated Excitonic Transistor Using Poly(3-hexylthiophene) AITranslate

Paromita Bhattacharjee; Himakshi Mishra; Parameswar Krishnan Iyer; Harshal Bhalchandra Nemade
Indian Institute of Technology Guwahati; Indian Institute of Technology Guwahati; Indian Institute of Technology Guwahati; Indian Institute of Technology Guwahati
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Publisher: ACS
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Abstract AITranslate

An organic semiconductor, regioregular poly(3-hexylthiophene) (rrP3HT), based excitonic transistor on a piezoelectric YZ lithium niobate substrate is reported for the first time. The propagating surface acoustic wave (SAW) field ionizes the excitons, stores the charge pair in the SAW modulated potential field in the semiconductor, and carries them forward. A long-range transport ∼4.7 mm at room temperature has been demonstrated. The electrical control of the exciton flux was achieved with SAW propagating through a dual metal–insulator–semiconductor (MIS) structure. The working of the device has been demonstrated using white and green light. A threshold voltage of −20.65 V was observed, and the working mechanism of the proposed device has been verified through numerical analysis using MATLAB. The potential use of the proposed device structure as an all optical device was verified electrically with additional electrode terminals at the output end.

KeyWords AITranslate

excitons excitonic transistor surface acoustic wave acoustic charge transport organic semiconductor regioregularShow More
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DOI：https://doi.org/10.1021/acsaelm.3c00400

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Citation Information:

An organic semiconductor, regioregular poly(3-hexylthiophene) (rrP3HT), based excitonic transistor on a piezoelectric YZ lithium niobate substrate is reported for the first time. The propagating surface acoustic wave (SAW) field ionizes the excitons, stores the charge pair in the SAW modulated potential field in the semiconductor, and carries them forward. A long-range transport ∼4.7 mm at room temperature has been demonstrated. The electrical control of the exciton flux was achieved with SAW propagating through a dual metal–insulator–semiconductor (MIS) structure. The working of the device has been demonstrated using white and green light. A threshold voltage of −20.65 V was observed, and the working mechanism of the proposed device has been verified through numerical analysis using MATLAB. The potential use of the proposed device structure as an all optical device was verified electrically with additional electrode terminals at the output end.

quote

GB/T 7714-2015 [1] Paromita Bhattacharjee, Himakshi Mishra, Parameswar Krishnan Iyer, et al. ACS Applied Electronic Materials, 2023(5). DOI:10.1021/acsaelm.3c00400.
MLA [1] Paromita Bhattacharjee, et al., ACS Applied Electronic Materials, no. 5, 2023, https://doi.org/10.1021/acsaelm.3c00400.
APA [1] Paromita Bhattacharjee, Himakshi Mishra, Parameswar Krishnan Iyer, & Harshal Bhalchandra Nemade. (2023). ACS Applied Electronic Materials(5). https://doi.org/10.1021/acsaelm.3c00400
IEEE [1] Paromita Bhattacharjee, Himakshi Mishra, Parameswar Krishnan Iyer, and Harshal Bhalchandra Nemade, ACS Applied Electronic Materials, no. 5, 2023, doi: 10.1021/acsaelm.3c00400. keywords: {excitons excitonic transistor surface acoustic wave acoustic charge transport organic semiconductor regioregularShow More}