daohang fenxiangbox searchbox qikanlogonew daohangnew searchboxnew navrightzone footerzone paper

Preparation and Characterization of Ge Nanoneedles AITranslate

School of Materials Science and Engineering, Anhui University of Technology;School of Materials Science and Engineering, Anhui University of Technology;School of Materials Science and Engineering, Anhui University of Technology
AITranslate
Publisher: Editorial Office of Rare Metals and Cemented Carbides
Share Citation Information Add to Favorites

    Scan to share on WeChat or Moments

Use WeChat scan.
Share with WeChat friends or Moments

Abstract AITranslate

Ge nanoneedles were prepared by hydrothermal deposition process using Ge and GeO2 as the starting materials and copper sheet as the deposition substrate. The Ge nanoneedle sample was characterized by scanning electron microscopy (SEM), energy dispersive X-ray spectrum (EDS), transmission electron microscopy (TEM) and high-resolution transmission electron microscopy (HRTEM). The results demonstrate that the sample is of typical needle structure and composed of monocrystalline Ge and amorphous Ge oxide outer layer,and its length is more than 10 μm. Furthermore, the formation and growth of the Ge nanoneedle are explained by the mechanisms of metal-catalyzed vapor-liquid-solid and oxide-assisted growth.

KeyWords AITranslate

Ge nanoneedle hydrothermal deposition preparation characterization

1Heath J R,LeGoues F K. A liquid solution synthesis of single crystal germanium quantum wires[J]. Chem Phys Lett, 1993,208 (2) : 262-268.

2Hanrath T, Korgel B. Nucleation and growth of germanium nanowires seeded by organic monolayer-coated gold nanocrystals[J]. J Am Chem Soc, 2002,124 (7) : 1 424- 1 429.

3Hanrath T, Korgel B A. Crystallography and surface faceting of germanium nanowires[J]. Small, 2005,1 (7) : 717 -721.

4裴立宅,赵海生.锗纳米线的制备与生长机理[J].稀有金属与硬质合金,2007,35(3):43-48. 被引量:2

5Dailey J W,Taraci J ,Clement T,et al. Vapor-liquid-solid growth of germanium nanostructures on silicon [J].J Appl Phys,2004,96(12) :7 556-7 567.

6Wang D, Dai H. Low-temperature synthesis of singlecrystal germanium nanowires by chemical vapor deposition[J].Angew Chem Int Ed,2002,41:4 783-4 786.

7Coleman N R B,Ryan K M,Spalding T R,etal. The formation of dimensionally ordered germanium nanowires within mesoporous silica[J].Chem Phys Lett,2001,343: 1-6.

8Han W Q, Wu L J,Zhu Y M,et al. In-situ growth of crystalline Ge nanowires by using nanotuhes as template[J]. Microsc Microanal, 2005,11 (S2) : 1 506-1 507.

9叶好华,叶志镇,黄靖云,吴贵斌,赵炳辉,涂江平,侯山昆.氧化铝模板法制备Ge纳米线[J].半导体学报:英文版,2003,24(2):173-176. 被引量:9

10Morales A M, Lieber C M. A laser ablation method for the synthesis of crystalline semiconductor nanowires [J]. Science, 1998,279 (15) : 208-211.

1裴立宅,赵海生,陶新秀,俞海云,樊传刚,张千峰.水热沉积锗纳米棒的生长机理[J].安徽工业大学学报:自然科学版,2010,27(1):47-51.

2顾广瑞,吴宝嘉,金逢锡,金哲,李哲奎.石英管型MWPCVD法制备的纳米针状结构碳膜的场发射特性[J].液晶与显示,2007,22(5):535-540. 被引量:5

3裴立宅,唐元洪,张勇,郭池,陈扬文.氧化物辅助生长硅纳米线[J].材料工程,2005,33(6):54-58. 被引量:2

4侯蓝田,付连符,吕平,韩玉华,李秋更,徐立瑄,李天柱.二氧化锗空芯光纤的研究[J].中国科学:A辑,1995,25(4):444-448. 被引量:1

5安宁宁,梁齐,饶晓俊,梁金,于永强.脉冲激光沉积制备纳米材料研究进展[J].真空,2010,47(6):10-14.

6赖云锋,程树英.合成参数对MOCVD法生长氧化锌纳米针的影响[J].福州大学学报:自然科学版,2010,38(6):836-840.

7吕平,侯兰田,付连符,韩玉华.二氧化锗空芯光纤的研制[J].高技术通讯,1994,4(5):21-24. 被引量:1

8周佳耀,侯峙云,等.纳米GeO2在空芯光纤中的化学与气沉积[J].燕山大学学报,2001,25(2):131-134.

9Kenneth E.Lee,Eugene A.Fitzgerald,Lionel C.Kimerling,Jurgen Michel.Efficient above-band-gap light emission in germanium[J].中国光学快报:英文版,2009,7(4):271-273.

10唐凤再.浅析MCVD工艺中优化光纤(G.652)损耗的一种方法[J].网络电信,2004,6(5):28-30.

Basic Information:

DOI:

Chinese Library Classification Number:TN304.11[电子电信—物理电子学]

Citation Information:

Ge nanoneedles were prepared by hydrothermal deposition process using Ge and GeO2 as the starting materials and copper sheet as the deposition substrate. The Ge nanoneedle sample was characterized by scanning electron microscopy (SEM), energy dispersive X-ray spectrum (EDS), transmission electron microscopy (TEM) and high-resolution transmission electron microscopy (HRTEM). The results demonstrate that the sample is of typical needle structure and composed of monocrystalline Ge and amorphous Ge oxide outer layer,and its length is more than 10 μm. Furthermore, the formation and growth of the Ge nanoneedle are explained by the mechanisms of metal-catalyzed vapor-liquid-solid and oxide-assisted growth.

quote

GB/T 7714-2015 [1] PEI Li-zhai, ZHAO Hai-sheng, TAN Wei. Preparation and Characterization of Ge Nanoneedles[J]. Rare Metals and Cemented Carbides, 2009(2): 4-6.
MLA [1] PEI Li-zhai, et al., "Preparation and Characterization of Ge Nanoneedles." Rare Metals and Cemented Carbides, no. 2, 2009, pp. 4-6.
APA [1] PEI Li-zhai, ZHAO Hai-sheng, & TAN Wei. (2009). Preparation and Characterization of Ge Nanoneedles. Rare Metals and Cemented Carbides(2), 4-6.
IEEE [1] PEI Li-zhai, ZHAO Hai-sheng, and TAN Wei, "Preparation and Characterization of Ge Nanoneedles," Rare Metals and Cemented Carbides, no. 2, pp. 4-6, 2009. keywords: {Ge nanoneedle;hydrothermal deposition;preparation;characterization}