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Systematic Investigation of Ferroelectric Properties in x%YO1.5–(100–x%)Hf1–yZryO2 Films Systematic Investigation of Ferroelectric Properties in x%YO1.5–(100–x%)Hf1–yZryO2 Films AITranslate

Takanori Mimura; Yuki Tashiro; Takao Shimizu; Hiroshi Funakubo
Gakushuin University; Tokyo Institute of Technology; National Institute for Materials Science; Tokyo Institute of Technology
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Publisher: ACS
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Abstract AITranslate

The effect of composition on the ferroelectric properties was investigated using epitaxial x%YO1.5–(100–x%)Hf1–yZryO2 films. The tetragonal phase, with a composition near the phase boundaries with the orthorhombic or monoclinic phase, exhibits ferroelectricity through the field-induced phase transition from the tetragonal to the orthorhombic phase. Remarkably, the orthorhombic phase generated via the field-induced phase transition has a lower coercive field (Ec). The Ec could be controlled from 1400 (5%YO1.5–95%(Hf0.50Zr0.50)O2) to 2400 kV/cm (5%YO1.5–95%(Hf0.75Zr0.25)O2) with the same remnant polarization (Pr) value of ∼17 μC/cm2. These results are important for ferroelectric device applications with low-voltage drives.

KeyWords AITranslate

ferroelectric films pulsed laser deposition HfO2 epitaxial films coercive field
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DOI：https://doi.org/10.1021/acsaelm.2c01658

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Citation Information:

The effect of composition on the ferroelectric properties was investigated using epitaxial x%YO1.5–(100–x%)Hf1–yZryO2 films. The tetragonal phase, with a composition near the phase boundaries with the orthorhombic or monoclinic phase, exhibits ferroelectricity through the field-induced phase transition from the tetragonal to the orthorhombic phase. Remarkably, the orthorhombic phase generated via the field-induced phase transition has a lower coercive field (Ec). The Ec could be controlled from 1400 (5%YO1.5–95%(Hf0.50Zr0.50)O2) to 2400 kV/cm (5%YO1.5–95%(Hf0.75Zr0.25)O2) with the same remnant polarization (Pr) value of ∼17 μC/cm2. These results are important for ferroelectric device applications with low-voltage drives.

quote

GB/T 7714-2015 [1] Takanori Mimura, Yuki Tashiro, Takao Shimizu, et al. ACS Applied Electronic Materials, 2023(5). DOI:10.1021/acsaelm.2c01658.
MLA [1] Takanori Mimura, et al., ACS Applied Electronic Materials, no. 5, 2023, https://doi.org/10.1021/acsaelm.2c01658.
APA [1] Takanori Mimura, Yuki Tashiro, Takao Shimizu, & Hiroshi Funakubo. (2023). ACS Applied Electronic Materials(5). https://doi.org/10.1021/acsaelm.2c01658
IEEE [1] Takanori Mimura, Yuki Tashiro, Takao Shimizu, and Hiroshi Funakubo, ACS Applied Electronic Materials, no. 5, 2023, doi: 10.1021/acsaelm.2c01658. keywords: {ferroelectric films pulsed laser deposition HfO2 epitaxial films coercive field}