Indium Tin Oxide-Free Inverted Organic Photovoltaics Using Laser-Induced Forward Transfer Silver Nanoparticle Embedded Metal Grids Indium Tin Oxide-Free Inverted Organic Photovoltaics Using Laser-Induced Forward Transfer Silver Nanoparticle Embedded Metal Grids AITranslate
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Laser-induced forward transfer (LIFT) printing has emerged as a valid digital printing technique capable of transferring and printing a wide range of electronic materials. In this paper, we present for the first time LIFT printing as a method to fabricate silver (Ag) nanoparticle (np) grids for the development of indium tin oxide (ITO)-free inverted PM6:Y6 nonfullerene acceptor organic photovoltaics (OPVs). Limitations of the direct use of LIFT-printed Ag np grids in inverted ITO-free OPVs are addressed through a Ag grid embedding process. The embedded laser-printed Ag grid lines have high electrical conductivity, while the Ag metal grid transparency is varied by altering the number of Ag grid lines within the inverted OPVs’ ITO-free bottom electrode. Following the presented Ag-grid embedding (EMP) process, metal-grid design optimizations, and device engineering methods incorporating an EMB-nine-line Ag np grid/PH500/AI4083/ZnO bottom electrode, we have demonstrated inverted ITO-free OPVs incorporating laser-printed Ag grids with 11.0% power conversion efficiency.
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DOI:https://doi.org/10.1021/acsaelm.2c00217
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Laser-induced forward transfer (LIFT) printing has emerged as a valid digital printing technique capable of transferring and printing a wide range of electronic materials. In this paper, we present for the first time LIFT printing as a method to fabricate silver (Ag) nanoparticle (np) grids for the development of indium tin oxide (ITO)-free inverted PM6:Y6 nonfullerene acceptor organic photovoltaics (OPVs). Limitations of the direct use of LIFT-printed Ag np grids in inverted ITO-free OPVs are addressed through a Ag grid embedding process. The embedded laser-printed Ag grid lines have high electrical conductivity, while the Ag metal grid transparency is varied by altering the number of Ag grid lines within the inverted OPVs’ ITO-free bottom electrode. Following the presented Ag-grid embedding (EMP) process, metal-grid design optimizations, and device engineering methods incorporating an EMB-nine-line Ag np grid/PH500/AI4083/ZnO bottom electrode, we have demonstrated inverted ITO-free OPVs incorporating laser-printed Ag grids with 11.0% power conversion efficiency.
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| GB/T 7714-2015 | [1] Sergey M. Pozov, Kostas Andritsos, Ioannis Theodorakos, et al. ACS Applied Electronic Materials, 2022(4). DOI:10.1021/acsaelm.2c00217. |
| MLA | [1] Sergey M. Pozov, et al., ACS Applied Electronic Materials, no. 4, 2022, https://doi.org/10.1021/acsaelm.2c00217. |
| APA | [1] Sergey M. Pozov, Kostas Andritsos, Ioannis Theodorakos, Efthymios Georgiou, Apostolos Ioakeimidis, Ayala Kabla, Semyon Melamed, Fernando de la Vega, Ioanna Zergioti, & Stelios A. Choulis. (2022). ACS Applied Electronic Materials(4). https://doi.org/10.1021/acsaelm.2c00217 |
| IEEE | [1] Sergey M. Pozov, Kostas Andritsos, Ioannis Theodorakos, Efthymios Georgiou, Apostolos Ioakeimidis, Ayala Kabla, Semyon Melamed, Fernando de la Vega, Ioanna Zergioti, and Stelios A. Choulis, ACS Applied Electronic Materials, no. 4, 2022, doi: 10.1021/acsaelm.2c00217. keywords: {laserinduced forward transfer Ag nanoparticle ink ITOfree electrodes metal grids inverted organic photovoltaics reverseShow More} |
