Integration of ZnO-Based Resistive-Switching Memory and Ge2Sb2Te5-Based Phase-Change Memory Integration of ZnO-Based Resistive-Switching Memory and Ge2Sb2Te5-Based Phase-Change Memory AITranslate

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DOI：https://doi.org/10.1021/acsaelm.3c00064

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Memristor devices exhibited many advantages, such as fast write/read speed, high storage density, low power consumption, and simple structure, which could be applied to 3D stacking. However, the sneak current during stacking would become a major issue in the development of 3D structures. In this study, we proposed an integrated structure, one phase-change memory one resistive random access memory (1P1R), to suppress the sneak current. The 1P1R device was always kept at [0 1] or [0 0] (logic state) with high resistance to suppress the sneak current, while it was switched to [1 1] or [1 0] (working states) to write/read its state. Phase-change memory acted as the switching element, and resistive random access memory acted as the memory. Our electrical measurement confirmed its feasibility, and the property analysis provided the information for its speculated mechanism. The results successfully demonstrated that the novel 1P1R structure could be used to suppress sneak current, demonstrating potential for 3D IC manufacturing.