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Monitoring the Temperature of a Mo/Si Mirror with Photoluminescence in Extreme-Ultraviolet Lithography Monitoring the Temperature of a Mo/Si Mirror with Photoluminescence in Extreme-Ultraviolet Lithography AITranslate

JenIu Lo; YuChain Peng; HsiaoChi Lu; TonRong Tseng; BingMing Cheng
Department of Medical Research, Hualien Tzu Chi Hospital;Department of Medical Research, Hualien Tzu Chi Hospital;Department of Medical Research, Hualien Tzu Chi Hospital;Mastek Technologies, Inc.; Taiwan|Tzu-Chi University of Science and Technology
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Abstract AITranslate

Extreme-ultraviolet lithography uses a Mo/Si multilayer mirror as an optical unit to produce nanochips in a semiconductor fabrication plant. The Mo/Si multilayer mirror radiates an intense photoluminescence in the wavelength region 200–420 nm upon excitation with light at 13.5 nm. The emissions of the Mo/Si multilayer mirror depend noticeably on its operational temperature; we thus suggest to apply this property to directly monitor the temperature of a Mo/Si multilayer mirror in extreme-ultraviolet lithography. This scheme to monitor the temperature of a mirror can trace the real-time temperature due to the intrinsic property of photoluminescence.

KeyWords AITranslate

extremeultraviolet lithography extremeultraviolet radiation Mo/Si multilayer mirror photoluminescence temperature sensor
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Basic Information:

DOI：https://doi.org/10.1021/acsaelm.2c00347

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Citation Information:

Extreme-ultraviolet lithography uses a Mo/Si multilayer mirror as an optical unit to produce nanochips in a semiconductor fabrication plant. The Mo/Si multilayer mirror radiates an intense photoluminescence in the wavelength region 200–420 nm upon excitation with light at 13.5 nm. The emissions of the Mo/Si multilayer mirror depend noticeably on its operational temperature; we thus suggest to apply this property to directly monitor the temperature of a Mo/Si multilayer mirror in extreme-ultraviolet lithography. This scheme to monitor the temperature of a mirror can trace the real-time temperature due to the intrinsic property of photoluminescence.

quote

GB/T 7714-2015 [1] JenIu Lo, YuChain Peng, HsiaoChi Lu, et al. ACS Applied Electronic Materials, 2022(4). DOI:10.1021/acsaelm.2c00347.
MLA [1] JenIu Lo, et al., ACS Applied Electronic Materials, no. 4, 2022, https://doi.org/10.1021/acsaelm.2c00347.
APA [1] JenIu Lo, YuChain Peng, HsiaoChi Lu, TonRong Tseng, & BingMing Cheng. (2022). ACS Applied Electronic Materials(4). https://doi.org/10.1021/acsaelm.2c00347
IEEE [1] JenIu Lo, YuChain Peng, HsiaoChi Lu, TonRong Tseng, and BingMing Cheng, ACS Applied Electronic Materials, no. 4, 2022, doi: 10.1021/acsaelm.2c00347. keywords: {extremeultraviolet lithography extremeultraviolet radiation Mo/Si multilayer mirror photoluminescence temperature sensor}