Synthesis of the Powder for Growing 4H-SiC Single Crystal AITranslate
Abstract AITranslate
High purity SiC powder for single crystal growth was synthesized by self propagating method in vertical reaction chamber and horizontal rotating drum chamber,respectively,and 4 H-SiC single crystal was grown by using the synthesized high purity SiC powder.The crystal orientation,crystal form and purity of the synthesized powder were studied by bulk density test,XRD,Raman and GDMS.The morphology and crystal form of the grown 4 H-SiC single crystal were characterized to verify the applicability of the synthesized powder.The results show that when the synthesis process of high-purity SiC powder is carried out in the horizontal rotating drum chamber,the synthesized SiC powder has stable crystal form and good crystal quality,which meets the needs of growing 4 H-SiC single crystal.Compared with the vertical reaction chamber,the synthesis efficiency in the horizontal rotating drum chamber is increased from 87.8% to 98.7%.
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Chinese Library Classification Number:O78[理学—晶体学]
Citation Information:
High purity SiC powder for single crystal growth was synthesized by self propagating method in vertical reaction chamber and horizontal rotating drum chamber,respectively,and 4 H-SiC single crystal was grown by using the synthesized high purity SiC powder.The crystal orientation,crystal form and purity of the synthesized powder were studied by bulk density test,XRD,Raman and GDMS.The morphology and crystal form of the grown 4 H-SiC single crystal were characterized to verify the applicability of the synthesized powder.The results show that when the synthesis process of high-purity SiC powder is carried out in the horizontal rotating drum chamber,the synthesized SiC powder has stable crystal form and good crystal quality,which meets the needs of growing 4 H-SiC single crystal.Compared with the vertical reaction chamber,the synthesis efficiency in the horizontal rotating drum chamber is increased from 87.8% to 98.7%.
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| GB/T 7714-2015 | [1] LIU De-wei, YANG Hai-ping, DUAN Jin-chi, et al. Synthesis of the Powder for Growing 4H-SiC Single Crystal[J]. Rare Metals and Cemented Carbides, 2021(5): 71-76. |
| MLA | [1] LIU De-wei, et al., "Synthesis of the Powder for Growing 4H-SiC Single Crystal." Rare Metals and Cemented Carbides, no. 5, 2021, pp. 71-76. |
| APA | [1] LIU De-wei, YANG Hai-ping, DUAN Jin-chi, WANG Mei-chun, & PU Shi-kun. (2021). Synthesis of the Powder for Growing 4H-SiC Single Crystal. Rare Metals and Cemented Carbides(5), 71-76. |
| IEEE | [1] LIU De-wei, YANG Hai-ping, DUAN Jin-chi, WANG Mei-chun, and PU Shi-kun, "Synthesis of the Powder for Growing 4H-SiC Single Crystal," Rare Metals and Cemented Carbides, no. 5, pp. 71-76, 2021. keywords: {self propagating method;horizontal rotating drum chamber;4H-SiC;crystal growth;SiC powder;synthesis efficiency} |