Possible Extrinsic Ferroelectric-like Signals Originated from the Oxygen Vacancy Drift in HfO2-Based Films Possible Extrinsic Ferroelectric-like Signals Originated from the Oxygen Vacancy Drift in HfO2-Based Films AITranslate
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It is generally accepted that oxygen vacancies (VO) play a central role in the emergence of ferroelectricity for HfO2-based materials, but the underlying mechanism still remains elusive. Herein, starting from the basic characterization circuit, we propose a possible extrinsic source of the ferroelectric-like signals. A key finding is that charged VO oscillate within the sample under repeated electric pulses, yielding a nonlinear current which behaves similar to the polarization current for a normal ferroelectric. This unwanted current signal results in a ferroelectric-like hysteresis loop with both remnant polarization and coercive field in good agreement with experimental values, given a charged VO concentration in the vicinity of 1 × 1020 cm–3. Moreover, it is possible to exploit this mechanism to reproduce the scattered remnant polarization values and the effects of wake-up, split-up, and limited endurance that are of crucial relevance for the device applications.
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DOI:https://doi.org/10.1021/acsaelm.3c00181
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It is generally accepted that oxygen vacancies (VO) play a central role in the emergence of ferroelectricity for HfO2-based materials, but the underlying mechanism still remains elusive. Herein, starting from the basic characterization circuit, we propose a possible extrinsic source of the ferroelectric-like signals. A key finding is that charged VO oscillate within the sample under repeated electric pulses, yielding a nonlinear current which behaves similar to the polarization current for a normal ferroelectric. This unwanted current signal results in a ferroelectric-like hysteresis loop with both remnant polarization and coercive field in good agreement with experimental values, given a charged VO concentration in the vicinity of 1 × 1020 cm–3. Moreover, it is possible to exploit this mechanism to reproduce the scattered remnant polarization values and the effects of wake-up, split-up, and limited endurance that are of crucial relevance for the device applications.
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| GB/T 7714-2015 | [1] Yong Cheng, Maoyuan Zheng, Xingwang Zhang, et al. ACS Applied Electronic Materials, 2023(5). DOI:10.1021/acsaelm.3c00181. |
| MLA | [1] Yong Cheng, et al., ACS Applied Electronic Materials, no. 5, 2023, https://doi.org/10.1021/acsaelm.3c00181. |
| APA | [1] Yong Cheng, Maoyuan Zheng, Xingwang Zhang, Hao Dong, Yitian Jiang, Jinliang Wu, Jing Qi, & Zhigang Yin. (2023). ACS Applied Electronic Materials(5). https://doi.org/10.1021/acsaelm.3c00181 |
| IEEE | [1] Yong Cheng, Maoyuan Zheng, Xingwang Zhang, Hao Dong, Yitian Jiang, Jinliang Wu, Jing Qi, and Zhigang Yin, ACS Applied Electronic Materials, no. 5, 2023, doi: 10.1021/acsaelm.3c00181. keywords: {oxygen vacancies ion drift ferroelectricity P−E curve Sawyer−Tower circuit firstprinciples calculations} |
