Correction to “Influence of Metal Substitution and Ion Energy on Microstructure Evolution of High-Entropy Nitride (TiZrTaMe)N1–x (Me = Hf, Nb, Mo, or Cr) Films” Correction to “Influence of Metal Substitution and Ion Energy on Microstructure Evolution of High-Entropy Nitride (TiZrTaMe)N1–x (Me = Hf, Nb, Mo, or Cr) Films” AITranslate
Publisher: ACS
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DOI：https://doi.org/10.1021/acsaelm.2c00211
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| GB/T 7714-2015 | [1] Rui Shu, Daniel Lundin, Binbin Xin, et al. ACS Applied Electronic Materials, 2022(4). DOI:10.1021/acsaelm.2c00211. |
| MLA | [1] Rui Shu, et al., ACS Applied Electronic Materials, no. 4, 2022, https://doi.org/10.1021/acsaelm.2c00211. |
| APA | [1] Rui Shu, Daniel Lundin, Binbin Xin, Mauricio A. Sortica, Daniel Primetzhofer, Martin Magnuson, Arnaud le Febvrier, & Per Eklund. (2022). ACS Applied Electronic Materials(4). https://doi.org/10.1021/acsaelm.2c00211 |
| IEEE | [1] Rui Shu, Daniel Lundin, Binbin Xin, Mauricio A. Sortica, Daniel Primetzhofer, Martin Magnuson, Arnaud le Febvrier, and Per Eklund, ACS Applied Electronic Materials, no. 4, 2022, doi: 10.1021/acsaelm.2c00211. |