Ultrafast and Ultrabroadband UV–vis-NIR Photosensitivity under Reverse and Self-Bias Conditions by n+-ZnO/n-Si Isotype Heterojunction with >1 kHz Bandwidth AITranslate

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DOI：https://doi.org/10.1021/acsaelm.2c01668

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A high-performance broadband photodetector has attracted significant attention due to its wide range of applications. We report an n+-ZnO/n-Si isotype heterojunction by depositing ZnO nanorods followed by a ZnO thin film on an n-type undoped Si wafer for detecting a broad wavelength from 300 to 940 nm with a high speed under reverse as well as zero bias conditions. Under 1.5 V reverse and zero bias, the device provides responsivity values up to ∼200 and ∼13 mA/W respectively. Under self-bias, the n+-ZnO/n-Si heterojunction exhibits up to 1.2 × 103 photosensitivity. The n+-ZnO/n-Si heterojunction can detect power as low as 10–12 μW/cm2. A photoresponse up to 2 kHz modulated illuminations has been measured, and the ultrafast n+-ZnO/n-Si heterojunction provides a stable and rapid photoresponse with a response time in the 60–120 μs range. The n+-ZnO/n-Si heterojunction exhibits a −3 dB cutoff frequency of >2000 and 1100 Hz under reverse and zero bias, respectively. Therefore, we unprecedentedly demonstrate an n+-ZnO/n-Si isotype heterojunction as a potential candidate for detecting light in a broad ultraviolet to infrared region with a very high speed and >1 kHz frequency bandwidth as well.