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Rail-to-Rail MoS2 Inverters Rail-to-Rail MoS2 Inverters AITranslate

Jinpeng Tian; Yalin Peng; Qinqin Wang; Yanbang Chu; Zhiheng Huang; Na Li; Xiuzhen Li; Jian Tang; Biying Huang; Rong Yang; Luojun Du; Wei Yang; Dongxia Shi; Guangyu Zhang
University of Chinese Academy of Sciences; University of Chinese Academy of Sciences; University of Chinese Academy of Sciences; University of Chinese Academy of Sciences; University of Chinese Academy of Sciences;Beijing National Laboratory for Condensed Matter Physics and Institute of Physics; University of Chinese Academy of Sciences; University of Chinese Academy of Sciences; University of Chinese Academy of Sciences;Beijing National Laboratory for Condensed Matter Physics and Institute of Physics; University of Chinese Academy of Sciences; University of Chinese Academy of Sciences; University of Chinese Academy of Sciences; University of Chinese Academy of Sciences
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Publisher: ACS
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Abstract AITranslate

Two-dimensional semiconductors are considered as promising candidates for future electronic circuits thanks to the atomic thickness and no dangling bond surface. Additionally, as one of the most fundamental logic gates, high-performance inverters are crucial for integrated circuits. Here we design rail-to-rail MoS2 inverters by using bilayer MoS2 and MoO3 doped monolayer MoS2 transistors as load and driver transistors, respectively. The inverters exhibit a good rail-to-rail operation with a switching threshold voltage VM ≈ 2 V at VDD = 4 V, a high peak gain of 344 V/V, and a large noise margin NM ≈ 0.98 × (VDD/2).

KeyWords AITranslate

2D semiconductor MoS2 inverter railtorail operation ring oscillator
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Basic Information:

DOI：https://doi.org/10.1021/acsaelm.2c00444

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Citation Information:

Two-dimensional semiconductors are considered as promising candidates for future electronic circuits thanks to the atomic thickness and no dangling bond surface. Additionally, as one of the most fundamental logic gates, high-performance inverters are crucial for integrated circuits. Here we design rail-to-rail MoS2 inverters by using bilayer MoS2 and MoO3 doped monolayer MoS2 transistors as load and driver transistors, respectively. The inverters exhibit a good rail-to-rail operation with a switching threshold voltage VM ≈ 2 V at VDD = 4 V, a high peak gain of 344 V/V, and a large noise margin NM ≈ 0.98 × (VDD/2).

quote

GB/T 7714-2015 [1] Jinpeng Tian, Yalin Peng, Qinqin Wang, et al. ACS Applied Electronic Materials, 2022(4). DOI:10.1021/acsaelm.2c00444.
MLA [1] Jinpeng Tian, et al., ACS Applied Electronic Materials, no. 4, 2022, https://doi.org/10.1021/acsaelm.2c00444.
APA [1] Jinpeng Tian, Yalin Peng, Qinqin Wang, Yanbang Chu, Zhiheng Huang, Na Li, Xiuzhen Li, Jian Tang, Biying Huang, Rong Yang, Luojun Du, Wei Yang, Dongxia Shi, & Guangyu Zhang. (2022). ACS Applied Electronic Materials(4). https://doi.org/10.1021/acsaelm.2c00444
IEEE [1] Jinpeng Tian, Yalin Peng, Qinqin Wang, Yanbang Chu, Zhiheng Huang, Na Li, Xiuzhen Li, Jian Tang, Biying Huang, Rong Yang, Luojun Du, Wei Yang, Dongxia Shi, and Guangyu Zhang, ACS Applied Electronic Materials, no. 4, 2022, doi: 10.1021/acsaelm.2c00444. keywords: {2D semiconductor MoS2 inverter railtorail operation ring oscillator}