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Plasmonic Resonance-Enhanced Low Dark Current and High-Speed InP/InGaAs Uni-Traveling-Carrier Photodiode Plasmonic Resonance-Enhanced Low Dark Current and High-Speed InP/InGaAs Uni-Traveling-Carrier Photodiode AITranslate

Bojian Zhang; Yingjian Liu; Kai Jiang; Fangli Wang; Muyi Yang; Songpo Guo; Zhengfu Han; Liang Wang
University of Science and Technology of China; University of Science and Technology of China; University of Science and Technology of China; University of Science and Technology of China; University of Science and Technology of China; University of Science and Technology of China; University of Science and Technology of China; University of Science and Technology of China
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Publisher: ACS
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Abstract AITranslate

High-speed and high-efficiency photodiodes are especially beneficial for exponential data communication traffic growth. However, improving high responsivity while maintaining low dark current and high bandwidth remains a challenge for vertical detector design. This study proposes a plasmonic InP/InGaAs uni-traveling-carrier photodiode with optical antenna arrays, which exhibits a low dark current of 2.52 nA at a −3 V bias voltage, a high bandwidth of over 40 GHz, and a high responsivity of 0.12 A/W. The absorption efficiency of the photodiode shows 2-fold improvement using plasmonic resonance generated by nanodisks at 1550 nm. This work designs a low dark current and high-bandwidth photodiode with improved responsivity, which provides a potential method for high-speed vertical photodiode design.

KeyWords AITranslate

plasmonics photodiode optical antenna nearinfrared highspeed
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Basic Information:

DOI：https://doi.org/10.1021/acsaelm.2c01052

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Citation Information:

High-speed and high-efficiency photodiodes are especially beneficial for exponential data communication traffic growth. However, improving high responsivity while maintaining low dark current and high bandwidth remains a challenge for vertical detector design. This study proposes a plasmonic InP/InGaAs uni-traveling-carrier photodiode with optical antenna arrays, which exhibits a low dark current of 2.52 nA at a −3 V bias voltage, a high bandwidth of over 40 GHz, and a high responsivity of 0.12 A/W. The absorption efficiency of the photodiode shows 2-fold improvement using plasmonic resonance generated by nanodisks at 1550 nm. This work designs a low dark current and high-bandwidth photodiode with improved responsivity, which provides a potential method for high-speed vertical photodiode design.

quote

GB/T 7714-2015 [1] Bojian Zhang, Yingjian Liu, Kai Jiang, et al. ACS Applied Electronic Materials, 2022(4). DOI:10.1021/acsaelm.2c01052.
MLA [1] Bojian Zhang, et al., ACS Applied Electronic Materials, no. 4, 2022, https://doi.org/10.1021/acsaelm.2c01052.
APA [1] Bojian Zhang, Yingjian Liu, Kai Jiang, Fangli Wang, Muyi Yang, Songpo Guo, Zhengfu Han, & Liang Wang. (2022). ACS Applied Electronic Materials(4). https://doi.org/10.1021/acsaelm.2c01052
IEEE [1] Bojian Zhang, Yingjian Liu, Kai Jiang, Fangli Wang, Muyi Yang, Songpo Guo, Zhengfu Han, and Liang Wang, ACS Applied Electronic Materials, no. 4, 2022, doi: 10.1021/acsaelm.2c01052. keywords: {plasmonics photodiode optical antenna nearinfrared highspeed}