Coupling of Phase Transition and Self-Powered Photodetection of a NbSe2/VO2 Heterojunction Coupling of Phase Transition and Self-Powered Photodetection of a NbSe2/VO2 Heterojunction AITranslate
Abstract AITranslate
An endeavor to design a self-powered photodetector that can work in a broad temperature range is required for everyday applications. Herein, we present a self-powered NbSe2/VO2 bilayer photodetector with boosted performance stimulated by the phase transition of VO2 after heating. The NbSe2/VO2 heterojunction can be converted into a Schottky junction from a staggered heterojunction thanks to the semiconductor-to-metal phase transition (SMT) of VO2, resulting in a controlled built-in electric field at the bilayer junction. Its origin comes from a sharp increase in carrier transport, which results in a boosted photoresponse in the bilayer. Our photovoltaic detector has shown a fast response time of 122 μs at the VO2 metallic phase for a visible wavelength (405 nm), featuring a self-powered, high-speed, and energy-efficient device.
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DOI:https://doi.org/10.1021/acsaelm.2c00114
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An endeavor to design a self-powered photodetector that can work in a broad temperature range is required for everyday applications. Herein, we present a self-powered NbSe2/VO2 bilayer photodetector with boosted performance stimulated by the phase transition of VO2 after heating. The NbSe2/VO2 heterojunction can be converted into a Schottky junction from a staggered heterojunction thanks to the semiconductor-to-metal phase transition (SMT) of VO2, resulting in a controlled built-in electric field at the bilayer junction. Its origin comes from a sharp increase in carrier transport, which results in a boosted photoresponse in the bilayer. Our photovoltaic detector has shown a fast response time of 122 μs at the VO2 metallic phase for a visible wavelength (405 nm), featuring a self-powered, high-speed, and energy-efficient device.
quote
| GB/T 7714-2015 | [1] Yun Xin, Yang Tian, Muhammad Ahsan Iqbal, et al. ACS Applied Electronic Materials, 2022(4). DOI:10.1021/acsaelm.2c00114. |
| MLA | [1] Yun Xin, et al., ACS Applied Electronic Materials, no. 4, 2022, https://doi.org/10.1021/acsaelm.2c00114. |
| APA | [1] Yun Xin, Yang Tian, Muhammad Ahsan Iqbal, Yangfan Lu, Jianguo Lu, YuJia Zeng, & Zhizhen Ye. (2022). ACS Applied Electronic Materials(4). https://doi.org/10.1021/acsaelm.2c00114 |
| IEEE | [1] Yun Xin, Yang Tian, Muhammad Ahsan Iqbal, Yangfan Lu, Jianguo Lu, YuJia Zeng, and Zhizhen Ye, ACS Applied Electronic Materials, no. 4, 2022, doi: 10.1021/acsaelm.2c00114. keywords: {photodetector phase transition selfpowered NbSe2 VO2} |
