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Correction to “Direct Observation of Atomic Structures and Chemical States of Active and Inactive Dopant Sites in Mg-Doped GaN” AITranslate

Jingmin Tang; Soichiro Takeuchi; Masaki Tanaka; Hiroto Tomita; Yusuke Hashimoto; Takahiro Nagata; Jun Chen; Takuo Ohkochi; Yoshinori Kotani; Tomohiro Matsushita; Yoshiyuki Yamashita
Kyushu University;Nara Institute of Science and Technology (NAIST);Nara Institute of Science and Technology (NAIST);Nara Institute of Science and Technology (NAIST);Nara Institute of Science and Technology (NAIST);National Institute for Materials Science (NIMS);National Institute for Materials Science (NIMS);Japan Synchrotron Radiation Research Institute (JASRI);Japan Synchrotron Radiation Research Institute (JASRI); Japan|Japan Synchrotron Radiation Research Institute (JASRI); Kyushu University
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Publisher: ACS
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DOI：https://doi.org/10.1021/acsaelm.2c01304

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GB/T 7714-2015 [1] Jingmin Tang, Soichiro Takeuchi, Masaki Tanaka, et al. ACS Applied Electronic Materials, 2022(4). DOI:10.1021/acsaelm.2c01304.
MLA [1] Jingmin Tang, et al., ACS Applied Electronic Materials, no. 4, 2022, https://doi.org/10.1021/acsaelm.2c01304.
APA [1] Jingmin Tang, Soichiro Takeuchi, Masaki Tanaka, Hiroto Tomita, Yusuke Hashimoto, Takahiro Nagata, Jun Chen, Takuo Ohkochi, Yoshinori Kotani, Tomohiro Matsushita, & Yoshiyuki Yamashita. (2022). ACS Applied Electronic Materials(4). https://doi.org/10.1021/acsaelm.2c01304
IEEE [1] Jingmin Tang, Soichiro Takeuchi, Masaki Tanaka, Hiroto Tomita, Yusuke Hashimoto, Takahiro Nagata, Jun Chen, Takuo Ohkochi, Yoshinori Kotani, Tomohiro Matsushita, and Yoshiyuki Yamashita, ACS Applied Electronic Materials, no. 4, 2022, doi: 10.1021/acsaelm.2c01304.