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High Field-Effect Mobility and On/Off Current Ratio of p-Type ALD SnO Thin-Film Transistor High Field-Effect Mobility and On/Off Current Ratio of p-Type ALD SnO Thin-Film Transistor AITranslate

Myeong Gil Chae; Jina Kim; Hee Won Jang; Bo Keun Park; TaekMo Chung; Seong Keun Kim; Jeong Hwan Han
Seoul National University of Science and Technology; Seoul National University of Science and Technology; Seoul National University of Science and Technology; Korea Research Institute of Chemical Technology (KRICT); Korea Research Institute of Chemical Technology (KRICT); Korea University; Seoul National University of Science and Technology
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Publisher: ACS
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Abstract AITranslate

High-performance p-type thin-film transistors (TFTs) with high field-effect mobility and high on/off current ratios (Ion/Ioff) were fabricated by engineering the microstructure and surface morphology of the atomic layer-deposited (ALD) SnO channel layer. ALD SnO films grown at a deposition temperature of 225 °C showed excellent crystallinity and dense, smooth surfaces, which resulted in superior field-effect mobility of 6.13–7.24 cm2/V·s without using a high-temperature postannealing process. Optimization of the SnO channel thickness suppressed the off-state leakage current, which consequently yielded excellent TFT switching performance, with an Ion/Ioff value of 104–105. Additionally, backchannel passivation by the ALD Al2O3 film improved the subthreshold swing characteristics by reducing surface defect states. These results suggest that synergistic control of the microstructure, surface morphology, and thickness of ALD SnO channels is crucial for achieving high-performance p-type SnO TFTs.

KeyWords AITranslate

atomic layer deposition SnO mobility on/off current ratio ptype thinfilm transistor
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Basic Information:

DOI：https://doi.org/10.1021/acsaelm.2c01107

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Citation Information:

High-performance p-type thin-film transistors (TFTs) with high field-effect mobility and high on/off current ratios (Ion/Ioff) were fabricated by engineering the microstructure and surface morphology of the atomic layer-deposited (ALD) SnO channel layer. ALD SnO films grown at a deposition temperature of 225 °C showed excellent crystallinity and dense, smooth surfaces, which resulted in superior field-effect mobility of 6.13–7.24 cm2/V·s without using a high-temperature postannealing process. Optimization of the SnO channel thickness suppressed the off-state leakage current, which consequently yielded excellent TFT switching performance, with an Ion/Ioff value of 104–105. Additionally, backchannel passivation by the ALD Al2O3 film improved the subthreshold swing characteristics by reducing surface defect states. These results suggest that synergistic control of the microstructure, surface morphology, and thickness of ALD SnO channels is crucial for achieving high-performance p-type SnO TFTs.

quote

GB/T 7714-2015 [1] Myeong Gil Chae, Jina Kim, Hee Won Jang, et al. ACS Applied Electronic Materials, 2023(5). DOI:10.1021/acsaelm.2c01107.
MLA [1] Myeong Gil Chae, et al., ACS Applied Electronic Materials, no. 5, 2023, https://doi.org/10.1021/acsaelm.2c01107.
APA [1] Myeong Gil Chae, Jina Kim, Hee Won Jang, Bo Keun Park, TaekMo Chung, Seong Keun Kim, & Jeong Hwan Han. (2023). ACS Applied Electronic Materials(5). https://doi.org/10.1021/acsaelm.2c01107
IEEE [1] Myeong Gil Chae, Jina Kim, Hee Won Jang, Bo Keun Park, TaekMo Chung, Seong Keun Kim, and Jeong Hwan Han, ACS Applied Electronic Materials, no. 5, 2023, doi: 10.1021/acsaelm.2c01107. keywords: {atomic layer deposition SnO mobility on/off current ratio ptype thinfilm transistor}