Electromechanical Switching of a C60 Chain in a Nanogap Electromechanical Switching of a C60 Chain in a Nanogap AITranslate
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Electromechanical switching in fullerene C60 nanochains, introduced in the device as a C60 pyrrolidine tris-acid (CPTA) film, was realized in nanogap electrodes with ∼20 nm separation. Unlike microscale C60 channels, a conductive C60 chain spontaneously formed in the nanogap without electron beam irradiation. The initial current flow was likely due to electron hopping through the CPTA molecules. A higher voltage generated a nonlinear current and caused a rapid current step to drastically generate a large current flow. A further high current generated a sudden current reduction recognized as the negative differential resistance, suggesting a resistance state change from a low state to a high state. At the high-resistance state, a step-like current increase changed the nanochain conduction to the low-resistance state. The high- to low-resistance state switching was reproducible, and a sequential input voltage executed a binary resistance switching operation at room temperature. From the switching voltage and current values, the switching energy for the C60 chain in the nanogap was estimated to be approximately several milliwatts, most probably caused by the polymerization and depolymerization of the conductive C60 chain.
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DOI:https://doi.org/10.1021/acsaelm.3c00253
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Electromechanical switching in fullerene C60 nanochains, introduced in the device as a C60 pyrrolidine tris-acid (CPTA) film, was realized in nanogap electrodes with ∼20 nm separation. Unlike microscale C60 channels, a conductive C60 chain spontaneously formed in the nanogap without electron beam irradiation. The initial current flow was likely due to electron hopping through the CPTA molecules. A higher voltage generated a nonlinear current and caused a rapid current step to drastically generate a large current flow. A further high current generated a sudden current reduction recognized as the negative differential resistance, suggesting a resistance state change from a low state to a high state. At the high-resistance state, a step-like current increase changed the nanochain conduction to the low-resistance state. The high- to low-resistance state switching was reproducible, and a sequential input voltage executed a binary resistance switching operation at room temperature. From the switching voltage and current values, the switching energy for the C60 chain in the nanogap was estimated to be approximately several milliwatts, most probably caused by the polymerization and depolymerization of the conductive C60 chain.
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| GB/T 7714-2015 | [1] Masato Takei, Mihiro Takeuchi, Hiroshi Suga, et al. ACS Applied Electronic Materials, 2023(5). DOI:10.1021/acsaelm.3c00253. |
| MLA | [1] Masato Takei, et al., ACS Applied Electronic Materials, no. 5, 2023, https://doi.org/10.1021/acsaelm.3c00253. |
| APA | [1] Masato Takei, Mihiro Takeuchi, Hiroshi Suga, Takatsugu Wakahara, Katsunori Wakabayashi, Susumu Okada, & Kazuhito Tsukagoshi. (2023). ACS Applied Electronic Materials(5). https://doi.org/10.1021/acsaelm.3c00253 |
| IEEE | [1] Masato Takei, Mihiro Takeuchi, Hiroshi Suga, Takatsugu Wakahara, Katsunori Wakabayashi, Susumu Okada, and Kazuhito Tsukagoshi, ACS Applied Electronic Materials, no. 5, 2023, doi: 10.1021/acsaelm.3c00253. keywords: {fullerene polymerization C60 pyrrolidine trisacid (CPTA) resistance switching nanogap electrode fullerene derivativeShow More} |
