Effect of Bias on Composition and Microstructure of Zr-Nb-N Diffusion Barrier AITranslate

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Chinese Library Classification Number:TG146.41[金属学及工艺—金属材料]

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The Zr-Nb-N diffusion barrier films were deposited at different bias by radio-frequency reaction magnetron sputtering. The effect of bais on the microstructure and electric properties of Zr-Nb-N thin films is analyzed by EDS, XRD, TEM and resistance tester, etc. The results show that the bias has an obvious effect on the composition,resistivity and microstructure of Zr-Nb-N thin films. With the increase of bias, Nb/Zr mole ratio increases and resistivity rises in advance then falls. The Zr-Nb-N thin films of singlephase nanocrystalline, with the microstructure of substitutional solid solution, can be obtained at the bias of- 150 V.