Low Residual Carrier Density and High In-Grain Mobility in Polycrystalline Zn3N2 Films on a Glass Substrate Low Residual Carrier Density and High In-Grain Mobility in Polycrystalline Zn3N2 Films on a Glass Substrate AITranslate

Basic Information:

DOI：https://doi.org/10.1021/acsaelm.2c00181

Chinese Library Classification Number:

Citation Information:

We investigated the intrinsic physical properties of polycrystalline Zn3N2 thin films by suppressing donor impurities using the ultrahigh-vacuum sputtering technique. The residual carrier density was reduced to 4.4 × 1017 cm–3, resulting in a nondegenerate Zn3N2 thin film. In this film, we observed that grain boundary scattering had a significant effect on mobility, in contrast to previous reports on degenerate films. By fitting using the Seto model, the in-grain mobility reached 340 cm2 V–1 s–1, which is comparable to the mobility of epitaxial thin films, even though they were deposited at room temperature. Electric-double-layer transistors with nondegenerate Zn3N2 active layers were also examined to verify the potential as a transistor active layer material. The insights into trap density of polycrystalline Zn3N2 semiconductor in this report imply opportunities to explore high-performance flexible electronic devices.