Research on Influence of Pressure on Graphene Synthesis on HfO₂ Film Surface AITranslate

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Chinese Library Classification Number:TM242[一般工业技术—材料科学与工程]

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HfO₂ high-K dielectric films were prepared by vacuum electron beam evaporation,and graphene was prepared without transfer on the surface of HfO₂ substrate by PECVD.The effects of growth temperature on the microstructure,surface morphology,and dielectric properties of HfO₂ films were studied by GIXRD,AFM,impedance analyzer,and laser Raman spectrometer,as well as the effect of total reaction pressure on the growth of graphene on the surface of HfO₂ substrate.The results indicate that the HfO₂ film grown at 250℃exhibits an optimal surface morphology(RMS=0.232 nm),with amorphous structure and the highest relative dielectric constant(22.34).Appropriate total reaction pressure can balance the transport of carbon species and the growth rate of graphene,promote the uniform distribution of reactants,and thus improve the quality of graphene films.With the increase of total reaction pressure,the quality of graphene films increases first and then decreases.The few-layer graphene film with smooth surface and minimal defect level can be obtained at the pressure of 150 Pa.