Temperature Distribution in TaOx Resistive Switching Devices Assessed In Operando by Scanning Thermal Microscopy Temperature Distribution in TaOx Resistive Switching Devices Assessed In Operando by Scanning Thermal Microscopy AITranslate

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DOI：https://doi.org/10.1021/acsaelm.3c00229

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Understanding the physical changes during electroformation and switching processes in transition-metal-oxide-based non-volatile memory devices is important for advancing this technology. Relatively few characteristics of these devices have been assessed in operando. In this work, we present scanning thermal microscopy measurements in vacuum on TaOx-based memory devices electroformed in both positive and negative polarities and high- and low-resistance states. The observed surface temperature footprints of the filament showed higher peak temperatures and narrower temperature distributions when the top electrode served as the anode in the electroformation process. This is consistent with a model in which a hot spot is created by a gap in the conducting filament that forms closest to the anode. A similar behavior was seen on comparing the high-resistance state to the low-resistance state, with the low-resistance footprint showing a lower peak and a larger width, consistent with the gap disappearing when the device is switched from high resistance to low resistance.