Synthesis of a Tellurium Semiconductor with an Organic–Inorganic Hybrid Passivation Layer for High-Performance p-Type Thin Film Transistors AITranslate

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DOI：https://doi.org/10.1021/acsaelm.3c00620

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Development of high-performance p-channel devices is in high demand for implementing complementary metal-oxide semiconductor logic circuits. In this study, we propose a synthetic approach to high-performance p-type tellurium (Te) thin-film transistors (TFTs) passivated with an organic–inorganic hybrid passivation layer. A quasi-two-dimensional Te channel is synthesized by the sputtering system at room temperature, and an organic–inorganic hybrid passivation layer is formed via infiltration of the synthesis process, including diffusion and infiltration of inorganic Al2O3 into an SU-8 polymeric template, resulting in a high-performance p-type Te TFT with a field-effect mobility of 13.6 cm2/(V s), a subthreshold swing of 6.15 V/decade, and a current on–off ratio of 1.35 × 104. The synergistic effect of Al2O3 and SU-8 is systematically analyzed by implementing devices with hybrid passivation layers, enabling a significant improvement in the device performance compared with that of the device passivated with a single Al2O3 layer. Based on the chemical states and Raman response of the proposed structure, the reduction of oxidative Te states and the strain-induced shifts of the Raman modes are shown to attribute to the compensation for the thermal expansion mismatch and the decrease in the strain-induced damage, leading to enhanced device performance with excellent long-term stability over 70 days in the air. Thus, our work demonstrates the great potential of high-performance p-type Te TFTs for future electronic applications.