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Optically Induced Magnetization Switching in NiCo2O4 Thin Films Using Ultrafast Lasers Optically Induced Magnetization Switching in NiCo2O4 Thin Films Using Ultrafast Lasers AITranslate

University of Hyogo;Japan Synchrotron Radiation Research Institute; Kyoto University; Kyoto University; Osaka University
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Publisher: ACS
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Abstract AITranslate

All-optical magnetization control has recently been garnering considerable attention to realize next-generation ultrafast magnetic information devices. Here, employing a magneto-optical Kerr effect (MOKE) microscope, we observed the laser-induced magnetization switching of ferrimagnetic oxide NiCo2O4 (NCO) epitaxial thin films with perpendicular magnetic anisotropy, where the sample was pumped by 1030 nm laser pulses, and magnetic domain images were acquired via the MOKE microscope with a white light emitting diode. Laser pulses irradiated the NCO thin film at various temperatures from 300 to 400 K while altering the parameters of pulse interval, fluency, and the number of pulses in the absence of the external magnetic field. We observed accumulative all-optical helicity-dependent switching above 380 K. Our observation of oxide NCO thin films facilitates the realization of magnetization switching using ultrafast lasers without applying a magnetic field.

KeyWords AITranslate

spintronics perpendicular magnetic anisotropy magnetization switching oxide thin film laser irradiation
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Basic Information:

DOI:https://doi.org/10.1021/acsaelm.2c01233

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Citation Information:

All-optical magnetization control has recently been garnering considerable attention to realize next-generation ultrafast magnetic information devices. Here, employing a magneto-optical Kerr effect (MOKE) microscope, we observed the laser-induced magnetization switching of ferrimagnetic oxide NiCo2O4 (NCO) epitaxial thin films with perpendicular magnetic anisotropy, where the sample was pumped by 1030 nm laser pulses, and magnetic domain images were acquired via the MOKE microscope with a white light emitting diode. Laser pulses irradiated the NCO thin film at various temperatures from 300 to 400 K while altering the parameters of pulse interval, fluency, and the number of pulses in the absence of the external magnetic field. We observed accumulative all-optical helicity-dependent switching above 380 K. Our observation of oxide NCO thin films facilitates the realization of magnetization switching using ultrafast lasers without applying a magnetic field.

quote

GB/T 7714-2015 [1] Ryunosuke Takahashi, Takuo Ohkochi, Daisuke Kan, et al. ACS Applied Electronic Materials, 2023(5). DOI:10.1021/acsaelm.2c01233.
MLA [1] Ryunosuke Takahashi, et al., ACS Applied Electronic Materials, no. 5, 2023, https://doi.org/10.1021/acsaelm.2c01233.
APA [1] Ryunosuke Takahashi, Takuo Ohkochi, Daisuke Kan, Yuichi Shimakawa, & Hiroki Wadati. (2023). ACS Applied Electronic Materials(5). https://doi.org/10.1021/acsaelm.2c01233
IEEE [1] Ryunosuke Takahashi, Takuo Ohkochi, Daisuke Kan, Yuichi Shimakawa, and Hiroki Wadati, ACS Applied Electronic Materials, no. 5, 2023, doi: 10.1021/acsaelm.2c01233. keywords: {spintronics perpendicular magnetic anisotropy magnetization switching oxide thin film laser irradiation}