Photomultiplicative and High External Quantum Efficient Energy Conversion Device for Paper Electronics Photomultiplicative and High External Quantum Efficient Energy Conversion Device for Paper Electronics AITranslate
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In this research, we present an innovative paper electronics device featuring Bi2S3 nanorods (NRs) seamlessly integrated into a chemically oxidized p-TSA-conjugated polyaniline matrix. This innovative combination aims to achieve remarkable external quantum efficiency for energy conversion. The incorporation of Bi2S3 nanorods into the polyaniline matrix facilitates the creation of interconnected microlevel junctions between these materials, all of which are assembled on a flexible and biodegradable cellulose paper substrate to form the device. As per XPS analysis, Bi 4f7/2 and Bi 4f5/2 levels were identified at binding energies of 156.88 and 161.98 eV, respectively, indicating the doublet splitting of Bi atom. Furthermore, the Tauc plot, derived from UV–visible absorption analysis, revealed that the optical band gap of Bi2S3-polyaniline stood at 2.64 eV. This metallopolymeric energy device shows a large photoresponsivity of 16.85 A/W with a sufficiently high external quantum efficiency (EQE) of 3.93 × 103% at an extremely low drift potential of 0.1 V and small optical power of 50 μW/cm2. Additionally, the device exhibits notable responsiveness under flexibility without the use of any binder in the device fabrication process. Capacitance measurements, trap depth energy, and trap density with respect to frequency were carried out to better substantiate the photoconduction phenomenon.
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DOI:https://doi.org/10.1021/acsaelm.3c00673
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In this research, we present an innovative paper electronics device featuring Bi2S3 nanorods (NRs) seamlessly integrated into a chemically oxidized p-TSA-conjugated polyaniline matrix. This innovative combination aims to achieve remarkable external quantum efficiency for energy conversion. The incorporation of Bi2S3 nanorods into the polyaniline matrix facilitates the creation of interconnected microlevel junctions between these materials, all of which are assembled on a flexible and biodegradable cellulose paper substrate to form the device. As per XPS analysis, Bi 4f7/2 and Bi 4f5/2 levels were identified at binding energies of 156.88 and 161.98 eV, respectively, indicating the doublet splitting of Bi atom. Furthermore, the Tauc plot, derived from UV–visible absorption analysis, revealed that the optical band gap of Bi2S3-polyaniline stood at 2.64 eV. This metallopolymeric energy device shows a large photoresponsivity of 16.85 A/W with a sufficiently high external quantum efficiency (EQE) of 3.93 × 103% at an extremely low drift potential of 0.1 V and small optical power of 50 μW/cm2. Additionally, the device exhibits notable responsiveness under flexibility without the use of any binder in the device fabrication process. Capacitance measurements, trap depth energy, and trap density with respect to frequency were carried out to better substantiate the photoconduction phenomenon.
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| GB/T 7714-2015 | [1] Arpit Verma, Priyanka Chaudhary, Anshika Singh, et al. ACS Applied Electronic Materials, 2023(5). DOI:10.1021/acsaelm.3c00673. |
| MLA | [1] Arpit Verma, et al., ACS Applied Electronic Materials, no. 5, 2023, https://doi.org/10.1021/acsaelm.3c00673. |
| APA | [1] Arpit Verma, Priyanka Chaudhary, Anshika Singh, Ravi Kant Tripathi, Bal Chandra Yadav, & Pratima Chauhan. (2023). ACS Applied Electronic Materials(5). https://doi.org/10.1021/acsaelm.3c00673 |
| IEEE | [1] Arpit Verma, Priyanka Chaudhary, Anshika Singh, Ravi Kant Tripathi, Bal Chandra Yadav, and Pratima Chauhan, ACS Applied Electronic Materials, no. 5, 2023, doi: 10.1021/acsaelm.3c00673. keywords: {Bi2S3 nanorods paper electronics polyaniline energy devices EQE} |
