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Self-Driven UVC–NIR Broadband Photodetector with High-Temperature Reliability Based on a Coco Palm-Like MoS2/GaN Heterostructure Self-Driven UVC–NIR Broadband Photodetector with High-Temperature Reliability Based on a Coco Palm-Like MoS2/GaN Heterostructure AITranslate

RMIT University; India|CSIR-National Physical Laboratory; India|CSIR-National Physical Laboratory; India|CSIR-National Physical Laboratory; RMIT University; India|CSIR-National Physical Laboratory
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Publisher: ACS
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Abstract AITranslate

One of the dominant sources of energy production is burning fossil fuels (coal, natural gas, and petroleum), which emit different optical traces (ultraviolet to infrared). A self-driven broadband optical detector is essential for monitoring these optical signals in harsh environments because it is challenging to apply additional bias under high-temperature conditions. However, the existing optical detectors are constrained to operate at room temperature or require additional bias and present practical limitations in high-temperature operating environments. This study introduces a unique coco palm-like MoS2/GaN heterojunction-based self-powered photodetector that operates in the broadband spectral range from ultraviolet-C to near-infrared. The fabricated detector displays the highest responsivity of 379 mA W–1 under no applied bias at room temperature. The photodetector also exhibits consistent performance at high operating temperatures (up to 250 °C). Under self-driven conditions, the device possesses the highest responsivity of 360 mA W–1 at 250 °C. The heterostructure-based device also achieves the best responsivity of 2.8 × 106 mA W–1 at 8 V applied bias and has remarkable low-light detection abilities down to 9 femto-Watts. The high-temperature-operated self-driven broadband photodetector opens up possibilities for in situ monitoring of optical radiations from diverse industrial processes in challenging conditions and for optical signature-generating systems in the automobile, aerospace, and energy production industries.

KeyWords AITranslate

MoS2/GaN heterostructure selfdriven broadband photodetector hightemperature operation
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Basic Information:

DOI:https://doi.org/10.1021/acsaelm.3c00156

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Citation Information:

One of the dominant sources of energy production is burning fossil fuels (coal, natural gas, and petroleum), which emit different optical traces (ultraviolet to infrared). A self-driven broadband optical detector is essential for monitoring these optical signals in harsh environments because it is challenging to apply additional bias under high-temperature conditions. However, the existing optical detectors are constrained to operate at room temperature or require additional bias and present practical limitations in high-temperature operating environments. This study introduces a unique coco palm-like MoS2/GaN heterojunction-based self-powered photodetector that operates in the broadband spectral range from ultraviolet-C to near-infrared. The fabricated detector displays the highest responsivity of 379 mA W–1 under no applied bias at room temperature. The photodetector also exhibits consistent performance at high operating temperatures (up to 250 °C). Under self-driven conditions, the device possesses the highest responsivity of 360 mA W–1 at 250 °C. The heterostructure-based device also achieves the best responsivity of 2.8 × 106 mA W–1 at 8 V applied bias and has remarkable low-light detection abilities down to 9 femto-Watts. The high-temperature-operated self-driven broadband photodetector opens up possibilities for in situ monitoring of optical radiations from diverse industrial processes in challenging conditions and for optical signature-generating systems in the automobile, aerospace, and energy production industries.

quote

GB/T 7714-2015 [1] Pargam Vashishtha, Pukhraj Prajapat, Anuj Sharma, et al. ACS Applied Electronic Materials, 2023(5). DOI:10.1021/acsaelm.3c00156.
MLA [1] Pargam Vashishtha, et al., ACS Applied Electronic Materials, no. 5, 2023, https://doi.org/10.1021/acsaelm.3c00156.
APA [1] Pargam Vashishtha, Pukhraj Prajapat, Anuj Sharma, Preetam Singh, Sumeet Walia, & Govind Gupta. (2023). ACS Applied Electronic Materials(5). https://doi.org/10.1021/acsaelm.3c00156
IEEE [1] Pargam Vashishtha, Pukhraj Prajapat, Anuj Sharma, Preetam Singh, Sumeet Walia, and Govind Gupta, ACS Applied Electronic Materials, no. 5, 2023, doi: 10.1021/acsaelm.3c00156. keywords: {MoS2/GaN heterostructure selfdriven broadband photodetector hightemperature operation}