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Scandium-Doped Aluminum Nitride for Acoustic Wave Resonators, Filters, and Ferroelectric Memory Applications Scandium-Doped Aluminum Nitride for Acoustic Wave Resonators, Filters, and Ferroelectric Memory Applications AITranslate

Li Chen; Chen Liu; Minghua Li; Wendong Song; Weijie Wang; Zichu Wang; Nan Wang; Yao Zhu
Institute of Microelectronics;Institute of Microelectronics;Institute of Microelectronics;Institute of Microelectronics;Institute of Microelectronics; Nanyang Technological University;Institute of Microelectronics;Institute of Microelectronics
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Publisher: ACS
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Abstract AITranslate

Scandium-doped aluminum nitride (AlScN) has generated great research interest owing to its unique properties. The wurtzite-structure AlScN is compatible with the complementary metal oxide semiconductor (CMOS) process and has improved piezoelectricity compared with undoped aluminum nitride (AlN), making it a promising candidate to be used for next-generation radio frequency (RF) microelectromechanical system (MEMS) building blocks. Additionally, the ferroelectricity observed in AlScN can be potentially applied to ferroelectric memory devices. In this spotlight article, we provide a brief introduction of AlScN and summarize the recent progress of AlScN-based applications, including RF acoustic wave resonators, filters, and ferroelectric memory devices. Finally, the current challenges as well as the future opportunities of AlScN materials and related applications are discussed.

KeyWords AITranslate

AlScN piezoelectric RF MEMS acoustic wave resonators acoustic wave filters ferroelectric memory
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Basic Information:

DOI：https://doi.org/10.1021/acsaelm.2c01409

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Citation Information:

Scandium-doped aluminum nitride (AlScN) has generated great research interest owing to its unique properties. The wurtzite-structure AlScN is compatible with the complementary metal oxide semiconductor (CMOS) process and has improved piezoelectricity compared with undoped aluminum nitride (AlN), making it a promising candidate to be used for next-generation radio frequency (RF) microelectromechanical system (MEMS) building blocks. Additionally, the ferroelectricity observed in AlScN can be potentially applied to ferroelectric memory devices. In this spotlight article, we provide a brief introduction of AlScN and summarize the recent progress of AlScN-based applications, including RF acoustic wave resonators, filters, and ferroelectric memory devices. Finally, the current challenges as well as the future opportunities of AlScN materials and related applications are discussed.

quote

GB/T 7714-2015 [1] Li Chen, Chen Liu, Minghua Li, et al. ACS Applied Electronic Materials, 2023(5). DOI:10.1021/acsaelm.2c01409.
MLA [1] Li Chen, et al., ACS Applied Electronic Materials, no. 5, 2023, https://doi.org/10.1021/acsaelm.2c01409.
APA [1] Li Chen, Chen Liu, Minghua Li, Wendong Song, Weijie Wang, Zichu Wang, Nan Wang, & Yao Zhu. (2023). ACS Applied Electronic Materials(5). https://doi.org/10.1021/acsaelm.2c01409
IEEE [1] Li Chen, Chen Liu, Minghua Li, Wendong Song, Weijie Wang, Zichu Wang, Nan Wang, and Yao Zhu, ACS Applied Electronic Materials, no. 5, 2023, doi: 10.1021/acsaelm.2c01409. keywords: {AlScN piezoelectric RF MEMS acoustic wave resonators acoustic wave filters ferroelectric memory}