Effect of He Buffer Gas on Pulsed Nd:YAG Laser Deposition of EuxY2–xO3 Phosphor Thin Films AITranslate

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DOI：https://doi.org/10.1021/acsaelm.2c00691

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We investigated the feasibility of using He buffer gas to moderate the kinetic energy of pulsed laser deposition (PLD) plumes during the growth of EuxY2–xO3 phosphor films. The PLD growth of Y2O3 films using a Nd yttrium aluminum garnet (Nd:YAG) laser results in expanded lattice parameters compared to those of the bulk crystals, indicating the presence of crystal defects in the Y2O3 films. Ablation plumes with a high kinetic energy are generated by the Nd:YAG laser that operates at high energy densities, leading to defect formation. To moderate the kinetic energy without reducing the film growth rate, He buffer gas was used for the Nd:YAG-PLD growth of Y2O3 films, resulting in the suppression of crystal defect generation. This process was demonstrated to improve the phosphor properties of EuxY2–xO3 thin films grown via combinatorial PLD as the He buffer gas-induced reduction in crystal defect density enhances the phosphor properties of the EuxY2–xO3 films. Using He buffer gas to moderate the kinetic energy of PLD plumes is expected to be useful in reducing the crystal defect density and improving the film characteristics.