daohang fenxiangbox searchbox qikanlogonew daohangnew searchboxnew navrightzone footerzone paper
English
Chinese 简体中文 English English
Home > Journals > ACS Applied Electronic Materials
‹ Previous Article Next Article ›

Snapshots of Ambient Aging in 2D-Layered GaSe Snapshots of Ambient Aging in 2D-Layered GaSe AITranslate

TzJu Hong; YuXun Chen; Nguyen Nhat Quyen; YuHan Chen; ChengHsing Chen; BangHao Huang; JiannYeu Chen; MonShu Ho; JenhYih Juang; ChiaHao Chen; ChihWei Luo
National Yang Ming Chiao Tung University; National Yang Ming Chiao Tung University; National Yang Ming Chiao Tung University;MSSCORPS CO.;MSSCORPS CO.;MSSCORPS CO.; National Chung Hsing University; National Chung Hsing University; National Yang Ming Chiao Tung University;National Synchrotron Radiation Research Center (NSRRC), Hsinchu 30076; National Yang Ming Chiao Tung University
AITranslate
Publisher: ACS
Share Citation Information Add to Favorites

    Scan to share on WeChat or Moments

Use WeChat scan.
Share with WeChat friends or Moments

Abstract AITranslate

Ambient aging has substantially hindered the development of electronic and optoelectronic devices made of two-dimensional (2D) semiconducting layered materials because the origin of oxidation, degradation, and aging effects remains largely unexplored. This study unveils the mechanism and process of ambient aging in 2D-layered GaSe crystals by exploring the evolution of the ambient aging process in a snapshot fashion. Through the detailed examinations on surface morphology, lattice structure, and elemental compositions, three major stages of the aging process in GaSe crystals are identified: the formation of a defective GaSe top layer, a crystalline Ga2Se3 layer, and an amorphous Ga2O3 layer evolving on top of the Ga2Se3 layer. In particular, it is suggestive that the formation of the crystalline Ga2Se3 layer plays a crucial role in the entire oxidation process. The present results may be also applicable to other 2D semiconducting layered materials.

KeyWords AITranslate

aging oxidation 2D semiconducting layered materials GaSe ambient stability degradation
No data

Basic Information:

DOI：https://doi.org/10.1021/acsaelm.2c00468

Chinese Library Classification Number:

Citation Information:

Ambient aging has substantially hindered the development of electronic and optoelectronic devices made of two-dimensional (2D) semiconducting layered materials because the origin of oxidation, degradation, and aging effects remains largely unexplored. This study unveils the mechanism and process of ambient aging in 2D-layered GaSe crystals by exploring the evolution of the ambient aging process in a snapshot fashion. Through the detailed examinations on surface morphology, lattice structure, and elemental compositions, three major stages of the aging process in GaSe crystals are identified: the formation of a defective GaSe top layer, a crystalline Ga2Se3 layer, and an amorphous Ga2O3 layer evolving on top of the Ga2Se3 layer. In particular, it is suggestive that the formation of the crystalline Ga2Se3 layer plays a crucial role in the entire oxidation process. The present results may be also applicable to other 2D semiconducting layered materials.

quote

GB/T 7714-2015 [1] TzJu Hong, YuXun Chen, Nguyen Nhat Quyen, et al. ACS Applied Electronic Materials, 2022(4). DOI:10.1021/acsaelm.2c00468.
MLA [1] TzJu Hong, et al., ACS Applied Electronic Materials, no. 4, 2022, https://doi.org/10.1021/acsaelm.2c00468.
APA [1] TzJu Hong, YuXun Chen, Nguyen Nhat Quyen, YuHan Chen, ChengHsing Chen, BangHao Huang, JiannYeu Chen, MonShu Ho, JenhYih Juang, ChiaHao Chen, & ChihWei Luo. (2022). ACS Applied Electronic Materials(4). https://doi.org/10.1021/acsaelm.2c00468
IEEE [1] TzJu Hong, YuXun Chen, Nguyen Nhat Quyen, YuHan Chen, ChengHsing Chen, BangHao Huang, JiannYeu Chen, MonShu Ho, JenhYih Juang, ChiaHao Chen, and ChihWei Luo, ACS Applied Electronic Materials, no. 4, 2022, doi: 10.1021/acsaelm.2c00468. keywords: {aging oxidation 2D semiconducting layered materials GaSe ambient stability degradation}