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Reduced Leakage Current and Enhanced Photovoltaic Effect in Zn-Doped BiFeO3 Thin Films AITranslate

Xinyan Wang; Can Wang; Xiaokang Yao; Yong Zhou; Ning Liang; Qiao Jin; Kun Chen; Meng He; Erjia Guo; Chen Ge; Guozhen Yang; Kuijuan Jin
University of Chinese Academy of Sciences; University of Chinese Academy of Sciences; University of Chinese Academy of Sciences;Shanghai Advanced Research Institute; University of Chinese Academy of Sciences; Institute of Physics; University of Chinese Academy of Sciences; University of Chinese Academy of Sciences; University of Chinese Academy of Sciences; University of Chinese Academy of Sciences; University of Chinese Academy of Sciences; University of Chinese Academy of Sciences
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Publisher: ACS
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Abstract AITranslate

Zn-doped BiFeO3 (BFO) thin films with compositional formula BiFe1–xZnxO3 (x = 0, 0.1, and 0.2) have been epitaxially grown on SrRuO3 buffered SrTiO3 substrates by pulsed laser deposition. The high-concentration Zn doping does not suppress the ferroelectric polarization of the BFO films, and the Zn-doped BFO thin films also show reduced leakage current and an enhanced photovoltaic effect. By optical and photoelectron spectroscopy measurements, with Zn doping, the BFO thin films show more oxygen vacancies and a structural evolution, and moreover, a blue-shift of optical bandgap and an increase of work function are demonstrated. The reduction of leakage current and the enhancement of photovoltaic effect are related to the variation of interfacial Schottky junctions and oxygen vacancies with doping. This study reveals systematic insights into the effects of Zn doping on the physical properties of BFO thin films.

KeyWords AITranslate

BiFeO3 thin films acceptor doping leakage current photovoltaic effect work function oxygen vacancy
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Basic Information:

DOI：https://doi.org/10.1021/acsaelm.2c01690

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Citation Information:

Zn-doped BiFeO3 (BFO) thin films with compositional formula BiFe1–xZnxO3 (x = 0, 0.1, and 0.2) have been epitaxially grown on SrRuO3 buffered SrTiO3 substrates by pulsed laser deposition. The high-concentration Zn doping does not suppress the ferroelectric polarization of the BFO films, and the Zn-doped BFO thin films also show reduced leakage current and an enhanced photovoltaic effect. By optical and photoelectron spectroscopy measurements, with Zn doping, the BFO thin films show more oxygen vacancies and a structural evolution, and moreover, a blue-shift of optical bandgap and an increase of work function are demonstrated. The reduction of leakage current and the enhancement of photovoltaic effect are related to the variation of interfacial Schottky junctions and oxygen vacancies with doping. This study reveals systematic insights into the effects of Zn doping on the physical properties of BFO thin films.

quote

GB/T 7714-2015 [1] Xinyan Wang, Can Wang, Xiaokang Yao, et al. ACS Applied Electronic Materials, 2023(5). DOI:10.1021/acsaelm.2c01690.
MLA [1] Xinyan Wang, et al., ACS Applied Electronic Materials, no. 5, 2023, https://doi.org/10.1021/acsaelm.2c01690.
APA [1] Xinyan Wang, Can Wang, Xiaokang Yao, Yong Zhou, Ning Liang, Qiao Jin, Kun Chen, Meng He, Erjia Guo, Chen Ge, Guozhen Yang, & Kuijuan Jin. (2023). ACS Applied Electronic Materials(5). https://doi.org/10.1021/acsaelm.2c01690
IEEE [1] Xinyan Wang, Can Wang, Xiaokang Yao, Yong Zhou, Ning Liang, Qiao Jin, Kun Chen, Meng He, Erjia Guo, Chen Ge, Guozhen Yang, and Kuijuan Jin, ACS Applied Electronic Materials, no. 5, 2023, doi: 10.1021/acsaelm.2c01690. keywords: {BiFeO3 thin films acceptor doping leakage current photovoltaic effect work function oxygen vacancy}