Manipulation of Magnetic Properties and Magnetoresistance in Co/Cu/γ′-Fe4N/Mica Flexible Spin Valves via External Mechanical Strains Manipulation of Magnetic Properties and Magnetoresistance in Co/Cu/γ′-Fe4N/Mica Flexible Spin Valves via External Mechanical Strains AITranslate
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The strain-tailored magnetic and electronic transport properties in flexible spin valves (SPVs) have attracted attention due to their practical applications in flexible spintronic devices. Here, magnetic and spin-dependent electronic transport properties of Co/Cu/γ′-Fe4N/mica flexible SPVs are investigated. The strain-induced change ratio of magnetoresistance (MR) is 49% in Co(4.8 nm)/Cu(7.5 nm)/γ′-Fe4N(11.0 nm) flexible SPVs. The magnetic properties of Co(4.8 nm)/Cu(7.5 nm)/γ′-Fe4N(7.9 nm) flexible SPVs show mechanical stability at bending strains. The magnetic properties of flexible SPVs did not deteriorate after 100 times of bending and 60 h of bending. As the Co layer thickness decreases from 7.2 to 2.4 nm, the sign of MR changes from negative to positive. A negative MR appears due to the opposite scattering spin asymmetry coefficients between Co/Cu and γ′-Fe4N/Cu interfaces. A positive MR arises from the same scattering spin asymmetry coefficients at Co/Cu and γ′-Fe4N/Cu interfaces or magnetization misalignments between Co and γ′-Fe4N layers. Additionally, the MR is a combination of an anisotropy magnetoresistance and a giant magnetoresistance effect, which has been confirmed by MR–H curves with different measurement configurations (Hin-plane∥I, Hin-plane⊥I and Hout-of-plane⊥I) and M–H curves. The M–H curves show that the magnetization of γ′-Fe4N reverses before that of the Co layer.
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DOI:https://doi.org/10.1021/acsaelm.1c00999
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The strain-tailored magnetic and electronic transport properties in flexible spin valves (SPVs) have attracted attention due to their practical applications in flexible spintronic devices. Here, magnetic and spin-dependent electronic transport properties of Co/Cu/γ′-Fe4N/mica flexible SPVs are investigated. The strain-induced change ratio of magnetoresistance (MR) is 49% in Co(4.8 nm)/Cu(7.5 nm)/γ′-Fe4N(11.0 nm) flexible SPVs. The magnetic properties of Co(4.8 nm)/Cu(7.5 nm)/γ′-Fe4N(7.9 nm) flexible SPVs show mechanical stability at bending strains. The magnetic properties of flexible SPVs did not deteriorate after 100 times of bending and 60 h of bending. As the Co layer thickness decreases from 7.2 to 2.4 nm, the sign of MR changes from negative to positive. A negative MR appears due to the opposite scattering spin asymmetry coefficients between Co/Cu and γ′-Fe4N/Cu interfaces. A positive MR arises from the same scattering spin asymmetry coefficients at Co/Cu and γ′-Fe4N/Cu interfaces or magnetization misalignments between Co and γ′-Fe4N layers. Additionally, the MR is a combination of an anisotropy magnetoresistance and a giant magnetoresistance effect, which has been confirmed by MR–H curves with different measurement configurations (Hin-plane∥I, Hin-plane⊥I and Hout-of-plane⊥I) and M–H curves. The M–H curves show that the magnetization of γ′-Fe4N reverses before that of the Co layer.
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| GB/T 7714-2015 | [1] Xia Chen, Xiaohui Shi, Zeyu Zhang, et al. ACS Applied Electronic Materials, 2022(4). DOI:10.1021/acsaelm.1c00999. |
| MLA | [1] Xia Chen, et al., ACS Applied Electronic Materials, no. 4, 2022, https://doi.org/10.1021/acsaelm.1c00999. |
| APA | [1] Xia Chen, Xiaohui Shi, Zeyu Zhang, Xiang Liu, Chao Jin, & Wenbo Mi. (2022). ACS Applied Electronic Materials(4). https://doi.org/10.1021/acsaelm.1c00999 |
| IEEE | [1] Xia Chen, Xiaohui Shi, Zeyu Zhang, Xiang Liu, Chao Jin, and Wenbo Mi, ACS Applied Electronic Materials, no. 4, 2022, doi: 10.1021/acsaelm.1c00999. keywords: {flexible spintronics γ′Fe4Nbased flexible spintronic devices magnetic properties magnetoresistance bending strains} |
